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We have determined both the effective masses and the barrier heights for electrons and holes in pure SiO2 and lightly nitrided oxides with various nitrogen concentrations up to 4.5 at %. In contrast to previous studies which were usually carried out by assuming a value for either the effective mass or the barrier height, this study does not make such an assumption. The approach is proven to be reliable by examining the result for the well-studied pure SiO2 thin films. It is observed that with the increase of the nitrogen concentration the effective masses increase while both the barrier heights and the energy gap decrease. [ABSTRACT FROM AUTHOR]

In this letter, we report an approach to quantitative study of the relationship between the oxide charge trapping over the drain extension due to electrical stress and the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain current if the edge direct tunneling (EDT) is dominant in the drain current but in contrast, it leads to a reduction in the drain current if the band-to-band tunneling in the Si surface is dominant. A quantitative relationship between the charge trapping and the off-state drain leakage current in the EDT regime is established. From the measurement of the off-state current in the EDT regime, the charge trapping can be determined by using the approach developed in this study. [ABSTRACT FROM AUTHOR]

Examines the growth of polycrystalline silicon-boron (Si-B) layer on recrystallized amorphous silicon. Presence of SiB[sub 6] in Si-B layer; Mobility of the B atoms in Si-B layer during thermal annealing; Reduction of B diffusivity by SiB[sub 6].

Demonstrates the room temperature deposition of thin silicon dioxide film by reactive laser ablation from a c-silicon target in a cw low pressure oxygen radio frequency magnetron plasma. Significance on the reactivity of an oxygen gas; Description on the radio frequency hollow oval magnetron system; Demonstration of water free film deposition.