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A 50-nm-thick amorphous silicon film on a SiO2 substrate is crystallized by an excimer laser-induced sequential lateral solidification. In the crystallized film, the laser scanning direction has a tendency to generate the <100> texture formation, whereas the surface normal and another in-plane orientation (normal to the scanning direction), designated as rolling direction, do not reveal any distinct texture development. Some grain boundaries are faceted, suggesting having a low trap density. Thus, the presence of the faceted grain boundaries is favorable for polycrystalline silicon electronic devices, such as thin film transistors and solar cells. A further grain boundary faceting might be induced by annealing processes. [ABSTRACT FROM AUTHOR]

Plasma-free defect passivation is achieved on polycrystalline silicon thin-film transistors fabricated below 150 °C by annealing and extracting H from SiNx:H interlayer dielectric. By annealing at 250 °C without a plasma application, VT and μFE were improved from 11.5 V to 3.5 V and from 86 cm2/V s to 212 cm2/V s, respectively. Improvement in performance is attributed to defect passivation by H diffusing out from SiNx:H. Dangling bonds and strained bonds can be acceptably passivated around 170 °C, and 205 °C, respectively. The activation energy for the diffusion of H into polycrystalline silicon was estimated to be 0.87 eV. [ABSTRACT FROM AUTHOR]

The performance of transparent organic light-emitting diodes (OLEDs) can be substantially improved by increasing the rf sputtering power in the deposition of an indium tin oxide cathode. This dependence of device performance on sputtering power is quite different from that reported for transparent OLEDs. The effect is attributed to sputtering induced substrate-heating resulting in chemical reactions at the Al–LiF–Alq3 interface and electron injection enhancement. By effectively dissipating the energy of sputtered particles, device damage can be taken away. The findings herein show that a transparent OLED having better electron injection properties than a conventional OLED can be fabricated. [ABSTRACT FROM AUTHOR]