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Dip Pen Nanolithography is a direct write process that creates nanoscale dots and lines. Models typically predict dot and line size via assumption of constant ink flow rate from tip to substrate. This is appropriate for dot writing. It is however well-known, though models rarely reflect, that the ink flow rate depends upon writing speed during line writing. Herein, we explain the physical phenomenon that governs line writing and use this to model tip-substrate diffusion in line writing. We accurately predict (i) the increase in flow rate with writing speed and (ii) line width within 12.5%. [ABSTRACT FROM AUTHOR]

We present a method for selecting fabrication process parameters (temperature, catalyst film thickness, and hydrocarbon concentration) that may be used to grow multiwalled carbon nanotubes (CNTs) with desired outer diameter D and number of walls Nw. This capability enables the control of rigidity, which in turn makes it possible to control a CNT’s lateral vibration behavior and bending stiffness. A growth model was generated and used to link D and Nw to the process parameters. Experimental results showed that the models predicted D and Nw with less than 6% and 7% error, respectively. [ABSTRACT FROM AUTHOR]

The authors show that an elastic tube model of a (5,5) carbon nanotube predicts stretching and bending moduli that differ by 19%. This is due to (1) differing energy storage mechanisms in each mode and (2) the inability of the tube model to capture these effects. Conventional tube models assume a common energy storage mechanism in stretching and bending. They show that energy is stored primarily through bond stretching/rotation and bond torsion/van der Waals interactions in stretching and bending, respectively. This knowledge underscores the need to use different moduli to predict stretching, bending, and combined bending and stretching when using the tube model. [ABSTRACT FROM AUTHOR]

The authors report the behavior of a nanoscale parallel-guiding mechanism wherein the compliant components are single-walled carbon nanotubes. Parallel-guiding mechanisms are often the building blocks of macro- and microscale mechanical systems. The authors present results that provide insight into the performance of a parallel-guiding mechanism for nanoscale devices. The device exhibits a range over 75% of the device size, i.e., 5.5 nm, when actuated with 6.4 nN. Below 3.6 nN, displacements are due to bulk elastic bending of the nanotubes. Above 5.2 nN, displacements are governed by the hingelike bending of kinks in the nanotubes. van der Waals forces are shown to cause direction-dependent behavior. [ABSTRACT FROM AUTHOR]