1. Laser treatment of plasma-hydrogenated silicon wafers for thin layer exfoliation.
- Author
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Ghica, Corneliu, Nistor, Leona Cristina, Teodorescu, Valentin Serban, Maraloiu, Adrian, Vizireanu, Sorin, Scarisoreanu, Nae Doinel, and Dinescu, Maria
- Subjects
SEMICONDUCTOR wafers ,SILICON ,TRANSMISSION electron microscopy ,INDUSTRIAL lasers ,SEMICONDUCTORS - Abstract
We have studied by transmission electron microscopy the microstructural effects induced by pulsed laser annealing in comparison with thermal treatments of RF plasma hydrogenated Si wafers aiming for further application in the smart-cut procedure. While thermal annealing mainly produces a slight decrease of the density of plasma-induced planar defects and an increase of the size and number of plasma-induced nanocavities in the Si matrix, pulsed laser annealing of RF plasma hydrogenated Si wafers with a 355 nm wavelength radiation results in both the healing of defects adjacent to the wafer surface and the formation of a well defined layer of nanometric cavities at a depth of 25-50 nm. In this way, a controlled fracture of single crystal layers of Si thinner than 50 nm is favored. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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