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The crystallization process of melt quenched Ge-rich GeSbTe films, with composition optimized for memory applications, has been studied by optical reflectance measurements. The optical properties have been related to the structure and composition by means of the effective medium approximation. The compositional variations have been investigated by transmission electron microscopy and electron energy loss spectroscopy. Amorphous materials prepared by melt-quenching with different laser energy densities have been studied. For the energy density of 1.5 J cm−2, a uniform amorphous layer, with embedded Ge crystalline grains, is obtained. The film exhibits a crystallization temperature of 275 °C and no relevant phase separation during crystallization. For a lower energy density of 1 J cm−2, only half of the film thickness is quenched to the amorphous phase, with Ge depletion. The crystallization temperature of the Ge depleted film is 245 °C, and a partial phase separation occurs. [ABSTRACT FROM AUTHOR]

Two approaches of an automatic control were studied through mathematical fitting obtained from color mixing saturation curves in polydimethylsiloxane microfluidic devices: The integrative control with variable integral gain and integrative control with constant integral gain. The aim of this work is to control the color percentage decrement when dye is injected. The results indicate that microfluidic systems are very sensitive to changes in flow and the control variable needs to change slowly; that is, it must be small (at least 100 times less than the theoretically calculated values). The control and stabilization of the microfluidic system were achieved for dye percentages above 60%. The controlling color percentage could provide a tool to regulate other parameters' concentration applied to cell culture and alkalinity control (pH) of solutions in microfluidic devices. [ABSTRACT FROM AUTHOR]

The self-absorption of radiated photons increases the minority carrier concentration in semiconductor optoelectronic devices such as solar cells. This so-called photon recycling leads to an increase in the external luminescent efficiency, the fraction of internally radiated photons that are able to escape through the front surface. An increased external luminescent efficiency in turn correlates with an increased open-circuit voltage and ultimately conversion efficiency. We develop a detailed ray-optical model that calculates Voc for real, non-idealized solar cells, accounting for isotropic luminescence, parasitic losses, multiple photon reflections within the cell and wavelength-dependent indices of refraction for the layers in the cell. We have fabricated high quality GaAs solar cells, systematically varying the optical properties including the back reflectance, and have demonstrated Voc = 1.101 ± 0.002 V and conversion efficiencies of (27.8 ± 0.8)% under the global solar spectrum. The trends shown by the model are in good agreement with the data. [ABSTRACT FROM AUTHOR]

Photon management has been shown to be a fruitful way to boost the open circuit voltage and efficiency of high quality solar cells. Metal or low-index dielectric-based back reflectors can be used to confine the reemitted photons and enhance photon recycling. Gaining access to the back of the solar cell for placing these reflectors implies having to remove the substrate, with the associated added complexity to the solar cell manufacturing. In this work, we analyze the effectiveness of a single-layer reflector placed at the back of on-substrate solar cells, and assess the photon recycling improvement as a function of the refractive index of this layer. Al2O3-based reflectors, created by lateral oxidation of an AlAs layer, are identified as a feasible choice for on-substrate solar cells, which can produce a Voc increase of around 65% of the maximum increase attainable with an ideal reflector. The experimental results obtained using prototype GaAs cell structures show a greater than two-fold increase in the external radiative efficiency and a Voc increase of ~2% (~18 mV), consistent with theoretical calculations. For GaAs cells with higher internal luminescence, this Voc boost is calculated to be up to 4% relative (36 mV), which directly translates into at least 4% higher relative efficiency. [ABSTRACT FROM AUTHOR]

Photovoltaic conversion efficiencies of 32.6% and 30% at concentrations of 1000 and 3500 suns, respectively, are achieved in monolithic GaInP/GaAs dual-junction solar cells grown lattice matched on a GaAs substrate by metal-organic vapor-phase epitaxy. The tunnel-junction design, based on an (Al)GaAs/GaAs heterojunction, is found to be a key factor for achieving this efficiency at such high concentrations. Moreover, the thorough design and joint optimization of the front grid and the top-cell emitter, using quasi-three-dimensional distributed models, also plays a major role. Efficiencies of over 40% at 1000 suns should be achieved by extending this approach to triple-junction devices. [ABSTRACT FROM AUTHOR]

We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80-90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction. [ABSTRACT FROM AUTHOR]