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The temperature stability of vertical Bloch lines in the domain walls of three kinds of hard domains in uncompressed states is investigated experimentally. It is found that there exist three critical temperature ranges in which vertical Bloch lines are unstable for each kind of hard domain, i.e., [T[sub 0][sup 1],(T[sub 0])[sub OHB]] for ordinary hard bubbles (OHBs), [T[sub 0][sup 1],(T[sub 0])[sub ID]] for the first kind of dumbbells (IDs), and [T[sub 0][sup 1],(T[sub 0])[sub IID]] for the second kind of dumbbells (IIDs). Here T[sub 0][sup 1] is the initial critical temperatures in which vertical Bloch lines, in the walls of ordinary hard bubbles, the first kind of dumbbells and the second kind of dumbbells, are annihilated, while (T[sub 0])[sub OHB], (T[sub 0])[sub ID], and (T[sub 0])[sub IID] are the final critical temperatures at which vertical Bloch lines in their corresponding hard domains annihilate completely. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Discusses a study which examined uniformly silicon doped gallium arsenide/Al[sub0.33]Ga[sub0.67]As multilayer structures. Review of related literature; Description of the experimental setup; Findings.

Deals with a study which examined the sequential tunneling of electrons through Schottky diodes with gallium arsenide/aluminum gallium arsenide multiple quantum wells (MQW). Observations on two series of tunneling structures; Oscillations in the conductance; Discussion of the electron tunneling process through the MQW structures in terms of the creation and propagation of high-field domains as a function of the applied bias.

Presents a study which performed photoluminescence (PL) measurements of strained indium[subx]gallium[sub1-x]arsenide-aluminum[sub 0.28]gallium[sub0.72]arsenide heterostructures grown by molecular beam epitaxy. Dependence of the PL transition energy, linewidth and intensity on the indium[sub x]gallium[sub1-x]arsenide well thickness; Experimental procedure; Results and discussion.