1. Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs.
- Author
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He, Jiabei, Wei, Jin, Li, Yang, Zheng, Zheyang, Yang, Song, Huang, Baoling, and Chen, Kevin J.
- Subjects
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FIELD-effect transistors , *MODULATION-doped field-effect transistors , *HETEROJUNCTIONS , *GATES , *LOW temperatures - Abstract
The low-temperature gate reliability of Schottky-type p-GaN gate AlGaN/GaN heterojunction field-effect transistors under forward gate voltage stress is investigated. Both temperature-accelerated and voltage-accelerated time-dependent gate breakdown stress experiments are performed. The p-GaN gate exhibits a shorter time-to-failure at a lower temperature. It is found that the time-to-failure at "use conditions" predicted by acceleration tests at high gate bias stress could be overestimated at low temperatures. Such a discrepancy stems from the distinct dominant gate leakage mechanisms at high/low gate bias stress conditions. The dominant physical mechanism of the low-temperature gate leakage current is identified to be Poole–Frenkel emission at low gate bias and Fowler–Nordheim tunneling at high bias. From the physical model, a more accurate lifetime projection can be obtained for given use conditions. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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