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The effect of doping on InSb/Al0.1In0.9Sb quantum wells (QWs) was investigated, and it was found that doping improves the electron mobility at low temperatures and leads to a weaker dependence of the resistivity with temperature. The dependence of the carrier density on the well width revealed trap states at the interfaces of the QW whose sheet density per interface was estimated to be about 4×1010cm-2. The low mobility of undoped InSb QWs, in particular, at low temperature seems to have been caused by positively ionized impurity scattering at the interfacial trap states. Doping compensates for the trap states and enhances mobility by suppressing ionized impurity scattering. Thus, intentional doping is necessary for developing high-mobility InSb QW devices. The origin of the trap states is qualitatively discussed. [ABSTRACT FROM AUTHOR]

The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses. [ABSTRACT FROM AUTHOR]

The resistivity of InAs0.1Sb0.9/Al0.1In0.9Sb quantum wells (QWs) is much lower than that of InSb/Al0.1In0.9Sb QWs, staying low resistivity even at low temperature. Fundamental difference in low temperature transport properties between InSb/Al0.1In0.9Sb and InAs0.1Sb0.9/Al0.1In0.9Sb QWs was revealed, based on the band diagram calculations of these QWs. Band diagrams of InAsxSb1-x/Al0.1In0.9Sb QWs showed that the energy band of the InAsxSb1-x layer moves downward with increasing As content x. The QW is type I at x equal to 0, becomes type II at x equal to 0.1. The Fermi level (EF) of the InSb QWs lies in the band gap and below apart from the bottom of the conduction band, while EF of the InAs0.1Sb0.9 QWs is above the bottom of the conduction band of the well. The calculated sheet carrier densities are in good agreement with the experimental results. It well explains that the sheet carrier density difference between InSb and InAs0.1Sb0.9 QWs mainly originates from this band diagram difference and the position of EF. [ABSTRACT FROM AUTHOR]