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Vacancy-type defects created by helium implantation in tungsten and their impact on the nano-hardness characteristics were investigated by correlating the results from the positron annihilation spectroscopy and the nano-indentation technique. Helium implantation was performed at room temperature (RT) and at an elevated temperate of 600 °C. Also, the effect of post-annealing of the RT implanted sample was studied. The S parameter characterizing the open volume in the material was found to increase after helium irradiation and is significantly enhanced for the samples thermally treated at 600 °C either by irradiation at high temperature or by post-annealing. Two types of helium-vacancy defects were detected after helium irradiation; small defects with high helium-to-vacancy ratio (low S parameter) for RT irradiation and large defects with low helium-to-vacancy ratio (high S parameter) for thermally treated tungsten. The hardness of the heat treated tungsten coincides with the S parameter, and hence is controlled by the large helium-vacancy defects. The hardness of tungsten irradiated at RT without thermal treatment is dominated by manufacturing related defects such as dislocation loops and impurity clusters and additionally by trapped He atoms from irradiation effects, which enhance hardness. He-stabilized dislocation loops mainly cause the very high hardness values in RT irradiated samples without post-annealing. [ABSTRACT FROM AUTHOR]

We perform a first-principles calculation to investigate the effect of a vacancy on the sliding of an iron (Fe) Σ5 (310) [001] tilt grain boundary (GB). We calculate vacancy formation energies in order to determine the site preference of the vacancy at the Fe GB. We show that vacancies can easily segregate to the GB region, which is attributed to special atomic configurations of the GB. We demonstrate that the maximal sliding energy barrier of the GB with a monovacancy is 2.78 J/m2, 15% lower than that of the vacancy-free GB, suggesting that the presence of vacancy at the GB increases the GB mobility. [ABSTRACT FROM AUTHOR]