1. Chemical stresses in boundary layer diffusion.
- Author
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Hung-Yi Lin, Sun-Chien Ko, and Sanboh Lee
- Subjects
- *
OPTOELECTRONICS , *DIFFUSION , *SEMICONDUCTORS , *HETEROSTRUCTURES , *SOLID state electronics , *ELECTROOPTICS - Abstract
Chemical stresses induced in the boundary layer of a B/A/B sandwiched slab during diffusion were analyzed. Both the cases of constant surface concentration source and instantaneous surface concentration source were considered. The diffusivity of diffusant is much greater in the central layer than the outer layers. The concentration of diffusant in the sandwiched slab was obtained using the Laplace-Fourier transformation technique. Assuming that the stresses developed in the outer layers were negligibly small during the boundary layer diffusion, the stresses developed in the central layer were determined based on the Moutier cycle theorem. Numerical results were performed to illustrate the effect of diffusivity ratio of diffusant in the central layer to that in the outer layers and of specimen size on stress variation. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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