Search

Femtosecond pulses at wavelengths ranging from 750 to 900 nm (1.38–1.65 eV) were used in the excitation and probing of ultrafast carrier dynamics in InN epitaxial films. Experimental results show that the hot electron relaxation rate increases with increasing electron energy, which is measured as E0.53. This observation agrees with the prediction of electron-electron scattering relaxation mechanism. In addition, the electron-hole recombination rates are independent of the electron energy and have values of ∼7×109 Hz. We attribute this result to the Auger recombination in InN being insensitive to temperature. [ABSTRACT FROM AUTHOR]

We demonstrate a low series resistance contact of gold (anode)/zinc-phthalocyznine in a reverse organic photovoltaic device aided by oxygen plasma treatment. The power conversion efficiency appreciated from 0.2% to 2.13%, post O2 plasma treatment, predominantly due to the reduction in the series resistance of the device. A depth profile of zinc from x-ray photoelectron spectroscopy study revealed a gold layer with graded zinc composition, instead of pure gold, to be an efficient hole-collector from the organic interface. The zinc alloying of the gold layer has clearly been promoted by the oxygen plasma treatment. [ABSTRACT FROM AUTHOR]

We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1 μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15–320 K. [ABSTRACT FROM AUTHOR]