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This paper studies the suppression of superconducting transition temperature (Tc) of ultrathin NbN film. We fabricated epitaxial NbN superconducting thin films of thicknesses ranging from 2.5 to 100 nm on single crystal MgO (100) substrates by dc magnetron sputtering. We performed structure analyses and measured their electric and far infrared properties. The experimental results were compared with several mechanisms of the suppression of superconductivity proposed in the literature, including the weak localization effect, the proximity effect, and quantum size effect (electron wave leakage model). We found that the electron wave leakage model matches best to the experimental data. [ABSTRACT FROM AUTHOR]

We report on Bi2Sr2CaCu2O8 (BSCCO) intrinsic Josephson junction stacks with improved cooling, allowing for a remarkable increase in emission frequency compared to the previous designs. We started with a BSCCO stack embedded between two gold layers. When mounted in the standard way to a single substrate, the stack emits in the range of 0.43-0.82 THz. We then glued a second, thermally anchored substrate onto the sample surface. The maximum voltage of this better cooled and dimension-unchanged sample was increased and, accordingly, both the emission frequencies and the tunable frequency range were significantly increased up to 1.05 THz and to 0.71 THz, respectively. This double sided cooling may also be useful for other "hot" devices, e.g., quantum cascade lasers. [ABSTRACT FROM AUTHOR]

We have combined a stand-alone Bi2Sr2CaCu2O8 intrinsic Josephson junction stack, emitting terahertz radiation, with a YBa2Cu3O7 grain boundary Josephson junction acting as detector. The detector is mounted on a lens, positioned 1.2 cm away from the emitter on a similar lens. With the emitter radiating at 0.5 THz, we observed up to 7 Shapiro steps on the current-voltage characteristic of the detector. The ac current induced in this junction was 0.9 mA, and the dissipated power was 1.8 μW. The setup, although far from being optimized, may be considered as a first step towards an integrated high-Tc receiver. [ABSTRACT FROM AUTHOR]

We report on terahertz (THz) surface impedance measurement of an epitaxial MgB2 thin film using time domain THz spectroscopy. We show that the surface resistance of the MgB2 film is much lower than that of YBa2Cu3O7-δ and copper in the THz range. A linear dependence of the surface reactance on frequency is observed, yielding a penetration depth of about 100 nm at low temperatures. The measurements agree qualitatively with calculations based on impurity scattering in the Born limit. Our results clearly indicate that MgB2 thin films have a great potential for THz electronic applications. [ABSTRACT FROM AUTHOR]