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2-Methyl-9,10-bis(naphthalen-2-yl)anthracene doped rubidium carbonate (MADN:Rb2CO3) is used as an effective electron injecting interlayer on an indium-tin oxide (ITO) cathode for inverted bottom-emission organic light-emitting diodes (IBOLEDs). At a Rb2CO3 doping concentration of 20% in MADN, the device exhibits enhanced characteristics, some of which are turn-on voltage, luminance at a given current density, and current efficiency. The attained performance is better than that of the device using lithium fluoride (LiF) as an n-type dopant. Space-charge-limited current acknowledges improved electrical properties of Rb2CO3 doped MADN. Ultraviolet and X-ray photoelectron spectroscopy investigation unveils an interfacial dipole layer induced by charge transfer between Rb2CO3 and ITO, leading to a lowered ITO work function and an electron injection barrier. The improved electron injection and transport capabilities contribute to better charge balance in IBOLED, thus resulting in advanced luminance efficiency. In addition, the morphology stability of organic films is also amended, which benefits long-term reliability under operationally induced thermal stress. Moreover, the effectiveness of using Rb2CO3:MADN as an electron injecting layer for IBOLEDs is superior to many of its alkali-based counterparts demonstrated in the literature, with high compatibility with different types of sophisticated ITO-based IBOLEDs. [ABSTRACT FROM AUTHOR]

In this study, silver grid/Ag2O and AgOx/MoO3 transparent conductive electrodes (TCEs) were fabricated and implemented in organic light-emitting diodes (OLEDs). The effects of ultraviolet (UV)-ozone treatment time on the silver grids are discussed. With a treatment duration of 15 s, the Ag2O thin films do not grow completely and current-voltage characteristics are poor. However, a 30 s UV-ozone treatment yielded good-quality Ag2O thin films. The Ag2O thin films were reconverted into the AgOx phase with further increases in UV-ozone exposure time. The Ag2O work function is nearly 5.0 eV, which decreases the injection barrier of the silver grids (∼4.7 eV) and MoO3 (∼5.3 eV). Nevertheless, excessive treatment time leads to the production of AgOx thin films and an increase in the work function to 5.3 eV, the same as the highest occupied molecular orbital energy of MoO3, which causes a work function mismatch. The work function mismatch between the Ag grids and the MoO3 layer results in a high injection barrier, decreasing OLED performance. The electrical properties of the electrodes and devices apparently depend on the composition of the silver oxide buffer layer, as determined using X-ray photoelectron spectroscopy. The surface and optical properties of the TCEs were also investigated. The results show that the OLED devices with the proposed TCEs have better roll off and current efficiency compared to traditional ITO-based devices. [ABSTRACT FROM AUTHOR]

A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. The current-voltage characteristics of the device are discussed in terms of the formation and rupture of its conductive filaments. The hybrid device shows stable electrical bistable behaviors after more than 200 resistance-switching cycles. The hybrid ZnO nanorod/PMMA device presented in this work has potential applications in the field of bistable random access memory devices. [ABSTRACT FROM AUTHOR]