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We present femtosecond-pulse-induced precession of magnetization at low laser fluence (< 5 μ J / cm 2) regime as a function of magnetic field and laser fluence in three Co/Pd multilayer (ML) systems. These systems belong to three different regimes of magnetic anisotropy that vary with Co thickness (t C o ): in-plane (sample 1, t C o = 0.74 nm), weakly out-of-plane (sample 2, t C o = 0.6 nm), and out-of-plane (sample 3, t C o = 0.40 nm). Interestingly, we observed that the precession amplitudes increase significantly with decreasing the Co layer thickness. In this study, the influence of various spin dynamics and static magneto-optical parameters on precession amplitude is examined critically and compared with a previously proposed analytical expression that connects those quantities. It is found that the enhancement of structural-dependent energy transfer efficiency between charge and spin subsystems is indeed responsible for the observed variations in precession amplitudes. On the basis of this fact, we discuss that the spin–orbit interaction that yields perpendicularly spin-polarized electrons in the MLs through the Co/Pd interface is responsible for the observed increase in precession amplitudes of locally excited magnetization. Our approach of employing low-fluence laser excitation of magnetization precession could be practical for developing a non-thermal, all-optical magnetic switching toward photonic memory applications. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In0.09Ga0.91N/Al0.19Ga0.81N superlattices grown by plasma-assisted molecular beam epitaxy was performed as a function of temperature. The experimental transition energies are consistently lower than the calculation based on structural parameters extracted from x-ray diffraction measurements. This indicates the presence of indium composition fluctuations in InGaN and hence local bandgap reduction that produces charge localization centers. The spectral width of the low-temperature PL of our m-plane InGaN/AlGaN superlattices is narrower than previously reported for m-plane InGaN/GaN quantum wells grown by MOCVD. The PL integrated intensity drops rapidly, though, as the temperature is increased to 300 K, indicating strong non-radiative recombination at room temperature. Time-resolved PL at low temperatures was performed to characterize the relaxation time scales in an undoped and a doped superlattice. [ABSTRACT FROM AUTHOR]

The impact of elemental boron (B) doping on the structural, optical, and magnetotransport properties of epitaxial Ge/AlAs/GaAs(001) heterostructures, grown by solid-source molecular beam epitaxy, was comprehensively investigated. Cross-sectional transmission electron microscopy analysis revealed atomically abrupt Ge:B/AlAs and AlAs/GaAs heterointerfaces and a lack of observable long-range defect formation or B segregation in the epitaxial Ge:B layer. Spectral broadening observed in the measured temperature-dependent photoluminescence spectra suggested valence band mixing during recombination, implying a splitting of the valence band heavy- and light-hole degeneracy due to residual strain resulting from substitutional B incorporation in the Ge epilayer. Temperature-dependent magnetotransport analysis of the B-doped Ge thin films exhibited the tell-tale signature of antilocalization, indicating observable spin–orbit interaction in the Ge:B system. Moreover, the temperature- and magnetic field-dependent magnetotransport results indicate the presence of single-carrier, p-type conduction in the Ge:B film, further affirming the successful incorporation and activation of B at a high concentration (∼4 × 1019 cm−3) and elimination of parallel conduction via the large-bandgap AlAs buffer. Together, these results provide insights into the effects of heavy doping (via elemental solid-source doping) on Ge-based heterostructures and their feasibility in future electronic and photonic applications. [ABSTRACT FROM AUTHOR]

Traditional organic–inorganic halide perovskites (OIHPs), in which perovskites layers are separated by an organic spacer material, have been mainly explored for photovoltaics devices, but they also offer promises for nonlinear optics and quantum light applications. These attributes include (a) high quantum efficiency, (b) large binding energy of excitons in low-dimensional structures, (c) polarons of long coherence times at room temperature, and (d) a large spin–orbit coupling. OIHP systems can be engineered to have photoluminescence (PL) emissions from UV to IR regions, in addition to power conversion efficiencies, in excess of 24%. This class of materials offers broad tunability of its properties, through controlling the number of atomic layers in the quantum well, tuning the organic spacer thickness, or even engineering the composition with exotic dopants. In this work, we present PL and time-resolved PL measurements of quasi-2D BA2PbI4 and provide new insights on the temperature dependence of their excitonic dynamics and fine structures of their PL emissions. We observed long lifetimes, which can result from the formation of large polarons, screening the Coulomb interactions of the charge carriers and reducing the scattering of the carriers with charge defects. [ABSTRACT FROM AUTHOR]

The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77K and 290K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation-recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications. [ABSTRACT FROM AUTHOR]

The impact of bulk and surface defect states on the vibrational and optical properties of step-graded epitaxial GaAs1-ySby (0 ≤ y ≤ 1) materials with and without chemical surface treatment by (NH4)2S was investigated. Tunable antimony (Sb) composition GaAs1-ySby epitaxial layers, grown by solid source molecular beam epitaxy (MBE), were realized on GaAs and Si substrates by varying key growth parameters (e.g., Sb/Ga flux ratio, growth temperature). Raman and photoluminescence (PL) spectroscopic analysis of (NH4)2S-treated GaAs1-ySby epitaxial layers revealed composition-independent Raman spectral widths and enhanced PL intensity (1.3×) following (NH4)2S surface treatment, indicating bulk defect-minimal epitaxy and a reduction in the surface recombination velocity corresponding to reduced surface defect sites, respectively. Moreover, quantification of the luminescence recombination mechanisms across a range of measurement temperatures and excitation intensities (i.e., varying laser power) indicate the presence of free-electron to neutral acceptor pair or Sb-defect-related recombination pathways, with detectable bulk defect recombination discernible only in binary GaSb PL spectra. In addition, PL analysis of the short- and long-term thermodynamic stability of sulfur-treated GaAs1-ySby/Al2O3 heterointerfaces revealed an absence of quantifiable atomic interdiffusion or native oxide formation. Leveraging the combined Raman and PL analysis herein, the quality of the heteroepitaxial step-graded epitaxial GaAs1-ySby materials can be optimized for optical devices. [ABSTRACT FROM AUTHOR]

We synthesized epitaxial BTO-BFO heterostructure with decreased leakage and simultaneously improved the multiferroic properties. This study provides new direction for ferromagnetic resonance studies, in high quality BTO-BFO films grown on LSMO. We observed small Gilbert damping (α=0.004) and the absence of large inhomogeneous broadening, in a film with 80 nm thickness of BTO-BFO on LSMO (110). This fact offers opportunities for employing this material system for spin transfer in multifunctional materials where controlling magnetization by a flow of spin angular momentum, or spin current, is crucial toward developing nanoscale spin-based memory and devices. Magnetic insulators, such as BTO-BFO on LSMO, are potentially excellent candidates for pure spin current without the existence of charge current. [ABSTRACT FROM AUTHOR]

The growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated ~0.10% tensile-strained Ge epilayer, owing to the thermal expansion coefficient mismatch between Ge and Si, and negligible epilayer lattice tilt. Micro-Raman spectroscopic analysis corroborated the strain-state of the Ge thin-film. Cross-sectional transmission electron microscopy revealed the formation of 90° Lomer dislocation network at Ge/Si heterointerface, suggesting the rapid and complete relaxation of Ge epilayer during growth. Atomic force micrographs exhibited smooth surface morphology with surface roughness < 2 nm. Temperature dependent Hall mobility measurements and the modelling thereof indicated that ionized impurity scattering limited carrier mobility in Ge layer. Capacitance and conductance-voltage measurements were performed to determine the effect of epilayer dislocation density on interfacial defect states (Dit) and their energy distribution. Finally, extracted Dit values were benchmarked against published Dit data for GeMOS devices, as a function of threading dislocation density within the Ge layer. The results obtained were comparable with GeMOS devices integrated on Si via alternative buffer schemes. This comprehensive study of directly-grown epitaxial Ge-on-Si provides a pathway for the development of Ge-based electronic devices on Si. [ABSTRACT FROM AUTHOR]

High-quality epitaxial Ge layers for GaAs/Ge/GaAs heterostructures were grown in situ in an arsenic-free environment on (100) off-oriented GaAs substrates using two separate molecular beam epitaxy (MBE) chambers, connected via vacuum transfer chamber. The structural, morphological, and band offset properties of these heterostructures are investigated. Reflection high energy electron diffraction studies exhibited (2 x 2) Ge surface reconstruction after the growth at 450 °C and also revealed a smooth surface for the growth of GaAs on Ge. High-resolution triple crystal x-ray rocking curve demonstrated high-quality Ge epilayer as well as GaAs/Ge/(001)GaAs heterostructures by observing Pendell€osung oscillations and that the Ge epilayer is pseudomorphic. Atomic force microscopy reveals smooth and uniform morphology with surface roughness of ^0.45 nm and room temperature photoluminescence spectroscopy exhibited direct bandgap emission at 1583 nm. Dynamic secondary ion mass spectrometry depth profiles of Ga, As, and Ge display a low value of Ga, As, and Ge intermixing at the Ge/GaAs interface and a transition between Ge/GaAs of less than 15 nm. The valence band offset at the upper GaAs/Ge-(2 x 2) and bottom Ge/(001)GaAs-(2 x 4) heterointerface of GaAs/Ge/GaAs double heterostructure is about 0.20 eV and 0.40 eV, respectively. Thus, the high-quality heterointerface and band offset for carrier confinement in MBE grown GaAs/Ge/GaAs heterostructures offer a promising candidate for Ge-based p-channel high-hole mobility quantum well field effect transistors. [ABSTRACT FROM AUTHOR]