89 results on '"Kim, Hyeong"'
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2. Unipolar resistive switching characteristics of pnictogen oxide films: Case study of Sb2O5.
3. Time-resolved resonant elastic soft x-ray scattering at Pohang Accelerator Laboratory X-ray Free Electron Laser.
4. High-resolution soft x-ray spectroscopic study on amorphous gallium indium zinc oxide thin films.
5. Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films.
6. Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate.
7. Stress measurements of radio-frequency reactively sputtered RuO2 thin films.
8. Layer sequence and silicide formation of a Co/(refractory metal) bilayer on (100)Si substrate.
9. Thickness dependence of the preferred orientation of Mn–Zn ferrite thin films deposited by ion-beam sputtering.
10. Formation of a large grain sized TiN layer using TiNx, the epitaxial continuity at the Al/TiN interface, and its electromigration endurance in multilayered interconnection.
11. Epitaxial growth of CoSi2 layer on (100)Si and facet formation at the CoSi2/Si interface.
12. Epitaxial growth of CoSi2 on Si wafer using Co/Ta bilayer.
13. Influence of effective channel length in self-aligned coplanar amorphous-indium-gallium-zinc-oxide thin-film transistors with different annealing temperatures.
14. PAL-XFEL soft X-ray scientific instruments and X-ray optics: First commissioning results.
15. Development of unusual magnetic anisotropy in Co-based trilayers.
16. Investigation on spatially separated atomic layer deposition by gas flow simulation and depositing Al2O3 films.
17. Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach.
18. Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer.
19. Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory.
20. Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide.
21. Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone.
22. Formation of TiO2 nanopattern using reverse imprinting and sol-gel method.
23. Effect of stress and density on the electrical and physical properties of MgO protecting layer for alternating current-plasma display panels.
24. Relationship between the microstructure and the discharge characteristics of MgO protecting layer in alternating current plasma display panels.
25. Nitrogen incorporation engineering and electrical properties of high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate.
26. Analysis of stresses in Ru thin films prepared by chemical vapor deposition.
27. Low-k Si-O-C-H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor.
28. Surface acoustic wave propagation properties of nitrogenated diamond-like carbon films.
29. Spectrophotometric analysis of aluminum nitride thin films.
30. Preparation of high quality RuO2 electrodes for high dielectric thin films by low pressure metal organic chemical vapor deposition.
31. Electrical properties of (Pb,La)TiO3 thin films deposited by low pressure metal-organic chemical vapor deposition using solid delivery system.
32. Epitaxial growth of ZnO thin films on R-plane sapphire substrate by radio frequency magnetron sputtering.
33. Effect of oblique sputtering on microstructural modification of ZnO thin films.
34. Microstructural evolution and preferred orientation change of radio-frequency-magnetron sputtered ZnO thin films.
35. Deposition mechanism and electrical properties of low pressure chemically vapor deposited W as a gate electrode.
36. Fabrication of n-metal-oxide semiconductor field effect transistor with Ta2O5 gate oxide prepared by plasma enhanced metalorganic chemical vapor deposition.
37. Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors.
38. Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films.
39. Width-dependent upper threshold field for flux noise in MgB2 strips.
40. Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide.
41. Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate.
42. Enhancement at low temperatures of the critical current density for Au-coated MgB[sub 2] thin films.
43. Investigation of interface trap states in TiN/Al[sub 2]O[sub 3]/p-Si capacitor by deep level transient spectroscopy.
44. Dependence of ferroelectric performance of sol–gel-derived Pb(Zr,Ti)O[sub 3] thin films on bottom-Pt-electrode thickness.
45. Electrical conduction properties of sputter-grown (Ba, Sr)TiO[sub 3] thin films having IrO[sub 2] electrodes.
46. Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition.
47. Interface chemistry and electrical properties of SrVO[sub 3]/LaAlO[sub 3] heterostructures.
48. Heteroepitaxial growth of β-SiC thin films on Si(100) substrate using bis-trimethylsilylmethane.
49. Ne+ ion sputtering effect on amorphous Ga-In-Zn-O thin-film surface investigated by high-resolution XPS.
50. Morphology of Si Nanowire Grown via Solid-Liquid-Solid Mechanism.
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