1. Ni full-filling into Al2O3/Al film with etched tunnels using a polyethylene glycol solution bath in electroless-plating.
- Author
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Jang, Joo-Hee, Lee, Chang-Hyoung, Choi, Woo-Sung, Kim, Nam-Jeong, Kim, Taek-You, Kim, Tae-Yoo, Kim, Jang-Hyun, Park, Chan, and Suh, Su-Jeong
- Subjects
POLYETHYLENE glycol ,ETCHING ,THERMOPLASTICS ,ELECTRIC resistors ,ELECTRODES ,POLYOLS ,ASPECT ratio (Images) - Abstract
Ni/Al
2 O3 /Al film was fabricated for a high performance capacitor using electrochemical etching, anodizing, and electroless-plating. The focus of this study was to form seamless and void-free Ni electrodes on Al2 O3 /Al with etched tunnels. The conventional deposition method of metal was limited to full-fill for the Al tunnel pits with a high aspect ratio, a depth of about 40 μm, and diameters of about 0.5-1 μm. Nevertheless, Ni filling in tunnel pits was achieved through electroless-plating for the first time, producing a seamless and void-free electrode. The authors used a polyethylene glycol solution bath to block the Pd on top of the tunnel prior to electroless-plating, which enabled the Ni to deposit preferentially at the bottom, leading to a filling from the bottom to the top. Finally, the capacitance density for the etched and Ni electroless plated films was 220 nF/cm2 while that for a film without any etch tunnel was 12.5 nF/cm2 . [ABSTRACT FROM AUTHOR]- Published
- 2010
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