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Studies the adsorption and desorption of n-alkanethiol monolayers on Au(111) under ultra-high vacuum conditions. Phases involved during growth; Changes in the desorption species at a critical coverage; Explanation of the coverage-dependent change of desorption in term of the difference in the molecule-substrate bonding.

We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films. GeTe is a chalcogenide that undergoes a nonvolatile phase change from the amorphous to crystalline state at approximately 200 °C, depending on the film thickness and stoichiometry. The phase change also causes a drop in the material's resistivity by six orders of magnitude. In this study, two GeTe-incorporated SRR designs were investigated. The first was an SRR made entirely out of GeTe and the second was a gold SRR structure with a GeTe film incorporated into the gap region of the split ring. These devices were characterized using THz time-domain spectroscopy and were heated in-situ to determine the change in the design operation with varying temperatures. [ABSTRACT FROM AUTHOR]

We demonstrate improved terahertz (THz) modulation using thermally crystallized germanium telluride (GeTe) thin films. GeTe is a chalcogenide material that exhibits a nonvolatile, amorphous to crystalline phase change at approximately 200 °C, as well as six orders of magnitude decreased electrical resistivity. In this study, amorphous GeTe thin films were sputtered on sapphire substrates and then tested using THz time-domain spectroscopy (THz-TDS). The test samples, heated in-situ while collecting THz-TDS measurements, exhibited a gradual absorbance increase, an abrupt nonvolatile reduction at the transition temperature, followed by another gradual increase in absorbance. The transition temperature was verified by conducting similar thermal tests while monitoring electrical resistivity. THz transmittance modulation data were investigated between 10 and 110 cm-1 (0.3-3.3 THz). A peak modulation of approximately 99% was achieved at 2.3 THz with a 100 nm GeTe film on a sapphire substrate. After isolating the sapphire and the crystalline GeTe (c-GeTe) absorbance contributions, the results showed THz modulations ranging from 88.5% to 91.5% that were attributed solely to the single layer of transitioned c-GeTe. These results strongly motivate using GeTe or other chalcogenide thin films in THz modulators, filters, and metamaterial applications. [ABSTRACT FROM AUTHOR]