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Charge extraction methods are popular for measuring the charge carrier density in thin film organic solar cells and to draw conclusions about the order and coefficient of nongeminate charge recombination. However, results from such studies may be falsified by inhomogeneous steady state carrier profiles or surface recombination. Here, we present a detailed drift-diffusion study of two charge extraction methods, bias-assisted charge extraction (BACE) and time-delayed collection field (TDCF). Simulations are performed over a wide range of the relevant parameters. Our simulations reveal that both charge extraction methods provide reliable information about the recombination order and coefficient if the measurements are performed under appropriate conditions. However, results from BACE measurements may be easily affected by surface recombination, in particular for small active layer thicknesses and low illumination densities. TDCF, on the other hand, is more robust against surface recombination due to its transient nature but also because it allows for a homogeneous high carrier density to be inserted into the active layer. Therefore, TDCF is capable to provide meaningful information on the order and coefficient of recombination even if the model conditions are not exactly fulfilled. We demonstrate this for an only 100 nm thick layer of a highly efficient nonfullerene acceptor (NFA) blend, comprising the donor polymer PM6 and the NFA Y6. TDCF measurements were performed as a function of delay time for different laser fluences and bias conditions. The full set of data could be consistently fitted by a strict second order recombination process, with a bias- and fluence-independent bimolecular recombination coefficient k2 = 1.7 × 10−17 m3 s−1. BACE measurements performed on the very same layer yielded the identical result, despite the very different excitation conditions. This proves that recombination in this blend is mostly through processes in the bulk and that surface recombination is of minor importance despite the small active layer thickness. [ABSTRACT FROM AUTHOR]

Organic semiconductors are excellent candidates for low temperature thermoelectric generators. However, such thermoelectric applications require materials be doped and highly conductive. Here, we show how doping affects the Seebeck coefficient in organic semiconductors using kinetic Monte Carlo simulations. Employing a hopping transport approach, we demonstrate that at high dopant loading, carrier–carrier interactions can reduce the Seebeck coefficient. This results in systems with intrinsic disorder, still following Heike's formula for thermopower at high dopant density. Reducing these carrier–carrier interactions results in an increased Seebeck coefficient and power factor. Specifically, a realistic reduction in carrier–carrier interactions can increase the power factor by more than a factor 15, increasing ZT above 1 for organic thermoelectrics. [ABSTRACT FROM AUTHOR]

Charge transport properties are investigated of blends of poly [2-methoxy-5-(3′, 7′-dimethyloctyloxy)-1,4-phenylene vinylene] (MDMO-PPV) and poly-[oxa-1,4-phenylene-(1-cyano-1,2-vinylene)-(2-methoxy-5-(3′, 7′-dimethyloctyloxy)-1,4-phenylene)-1,2-(2-cyanovinylene)-1,4-phenylene] (PCNEPV). The hole transport in the MDMO-PPV donor phase of the 1:1 weight ratio blend is trap-free space-charge limited, with a mobility identical to the pristine polymer. The electron current in the PCNEPV acceptor phase is strongly reduced by traps that are exponentially distributed in energy. The current in MDMO-PPV:PCNEPV bulk heterojunction solar cells is therefore unbalanced and dominated by the holes in the MDMO-PPV phase. [ABSTRACT FROM AUTHOR]

The origin of the enhanced performance of bulk heterojunction solar cells based on slowly dried films of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester is investigated, combining charge transport measurements with numerical device simulations. Slow drying leads to a 33-fold enhancement of the hole mobility up to 5.0×10-7 m2 V-1 s-1 in the P3HT phase of the blend, thereby balancing the transport of electrons and holes in the blend. The resulting reduction of space-charge accumulation enables the use of thick films (∼300 nm), absorbing most of the incoming photons, without losses in the fill factor and short-circuit current of the device. [ABSTRACT FROM AUTHOR]