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The trap parameters of defects in Si/CaF2 multilayered structures were determined from the analysis of optical charging spectroscopy measurements. Two kinds of maxima were observed. Some of them were rather broad, corresponding to 'normal' traps, while the others, very sharp, were attributed to stress-induced traps. A procedure of optimal linear smoothing the noisy experimental data has been developed and applied. This procedure is based on finding the minimal value of the relative error with respect to the value of the smoothing window. In order to obtain a better accuracy for the description of the trapping-detrapping process, a Gaussian temperature dependence of the capture cross-sections characterizing the stress-induced traps was introduced. Both the normal and the stress-induced traps have been characterized, including some previously considered as only noise features. [ABSTRACT FROM AUTHOR]

The influence of the shape of silicon quantum dots embedded in an amorphous silica matrix on the quantum confinement energy levels, as well as that of the Si/SiO2 potential barrier, are studied. The energy levels are computed using both the infinite and finite rectangular quantum well models for spherical quantum dots and the infinite rectangular quantum well for prolate spheroidal quantum dots. The results are compared with each other and also with the experimental activation energies obtained from the temperature dependence of the dark current. These activation energies are identified with the differences between the quantum confinement energies, subject to the selection rules. The finite rectangular quantum well model takes into account the experimental value of the finite potential barrier and the matrix-to-dot electron mass ratio. The energy levels are smaller than those for the infinite rectangular quantum well case; they decrease when the potential barrier decreases and the mass ratio increases. Different aspects of the models are discussed. All the errors are less than about 4%. The spheroidal shape lifts the degeneracy on the magnetic quantum number. The energy levels can decrease or increase with eccentricity as a consequence of the different quantum confinement effects along the major and minor axes. The supplementary information on the magnetic quantum number is beneficial for optical applications. [ABSTRACT FROM AUTHOR]