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Halide perovskites are essential materials for hard radiation detectors at ambient temperature. To improve detector performance, charge transport must be investigated and optimized. Using photoluminescence (PL) and thermally stimulated current (TSC) spectroscopies, we investigate photogenerated charge carriers in Bridgman-grown CsPbBr3 single crystals to understand the nature of charge transport. PL spectroscopy of these halide perovskites revealed the presence of strong emission bands at the band edge, which were attributed to free or bound excitons. It is shown that a wide broadening of the excitonic linewidth in these halide perovskites arises from strong exciton–phonon coupling, which is substantially dominated by longitudinal optical phonons via Fröhlich interaction. An additional contribution due to the presence of ionized impurities was also observed. Crystals with a detectable sensitivity to high-energy gamma radiation are characterized by a higher intensity and a narrower linewidth of the principal PL peak at 2.326 eV. Defect states beyond 2.214 eV have a negative impact on detector sensitivity to high-energy gamma radiation. TSC spectroscopy reveals an array of trap levels spanning 0.15–0.70 eV, attributed to intrinsic point defects and multiple extrinsic defects involving dopants or impurities. Defects identified included Cs and Br vacancies, as well as Pb interstitials with concentrations in the 1011–1016 cm−3 range. Understanding how the synthesis process impacts the types and concentrations of the defects present is currently under investigation. Elimination or suppression of the defect/trap states should result in halide perovskite materials with longer carrier diffusion lengths and improved detector characteristics. [ABSTRACT FROM AUTHOR]

High-flux capable semiconductor x-ray detectors are essential in various applications, but the detrimental effects of detector polarization limit their use in many cases. Here, we studied the polarization of perovskite CsPbBr3 semiconductor detectors using ultrahigh flux synchrotron x rays (106–1012 photons s−1 mm−2 at 58.61 keV). The CsPbBr3 detectors did not show immediate polarization prominently until a flux higher than 1010 photons s−1 mm−2. Using the pump-and-probe technique, we visualized the spatial and temporal effects of polarization. The polarized region, represented by reduced photocurrent, extended beyond the area under direct irradiation, and the reduced photocurrent persisted after potential de-polarization treatments. We found that stronger applied electric fields and fewer carrier traps can mitigate polarization, represented by less photocurrent deficit. By examining the detectors' current response under controlled ambient light, low, and high-flux x rays, we studied the trap filling and release behavior of CsPbBr3. We discovered that the polarization is caused by partial detector damage due to deep defects generated by ultrahigh flux x-ray irradiation. Our work provides insight into CsPbBr3 polarization under extremely intense x-ray radiation and shows that reducing crystal defects and increasing detector bias voltage are effective solutions. [ABSTRACT FROM AUTHOR]

Thermally stimulated current (TSC) spectroscopy was used to characterize electronic trap states in the perovskite CsPbCl3 bulk single crystals which are promising for gamma ray detection. The TSC spectra indicate the presence of multiple traps over the temperature range from 80 K to above room temperature. The possible analytical defects identified were VCs and VCl vacancies and Pbi interstitials that have concentrations of the order of 1011−1016 cm−3 and capture cross sections of ∼10−18 cm2. A comparison of crystals grown from different ingots reveals that the concentration of defects in the crystal with an improved growth procedure is about one to four orders of magnitude less than those of a crystal from an earlier growth process. A further reduction and elimination of trap states within the perovskite ingot should lead to crystals with improved mobilities, carrier lifetimes, and detector response characteristics. [ABSTRACT FROM AUTHOR]

Recently, there has been considerable interest in x-ray and gamma ray detectors with large volume and high energy resolution that operate at room temperature. To improve detector energy resolution, the carrier mobility-lifetime product needs to be increased, and the electronic trap state concentration needs to be minimized. Defect concentrations in the part per billion range can alter the charge transport and carrier recombination lifetime. In this work, thermally stimulated current spectroscopy measurements were systematically carried out in bulk halide perovskite single crystals of CsPbBr3 over a temperature range of 80–320 K. The origins and trap parameters of CsPbBr3 crystals from the solution growth and melt growth procedures were determined and compared. Trap concentrations were ranged from 1 × 1011 to 1 × 1016 cm−3. Appreciable detector performance was observed for CsPbBr3 crystals with trap concentrations less than 1 × 1014 cm−3. The comparison of spectral responses of crystal samples grown using two different methods shows that, after purification, solution-grown crystals are comparable to melt-grown crystals in terms of low defect concentration and improved detector performance. For an improved mobility-lifetime product and enhanced spectral response to high energy radiation from fissile materials, trap states in either type of a crystal ingot must be reduced closer to 1011 cm−3. [ABSTRACT FROM AUTHOR]

The heavy element semiconductor compound Cs2Hg6S7 is of interest as a potential wide gap semiconductor for gamma ray detection. To determine electrically active defects and their energy levels, photoconductivity (PC) spectroscopy was carried out over the temperature range of 90-295 K. The low temperature spectrum exhibits photoconductive transitions at 1.495, 1.61, 1.66, and 1.68 eV. The optical transitions are tentatively attributed to defects with levels located at energies of 50, 70, 120, and 240 meV from the band edge. A superlinear dependence of photocurrent on illumination intensity is observed that is attributed to a two-center recombination process that involves shallow traps and recombination centers. Near band edge photoluminescence (PL) was observed over the temperature range of 24-80 K. The spectrum revealed three defect related emission bands located at 1.68, 1.66, and 1.62 eV, whose ionization energies are 57 meV, 78 meV, and 115 meV, respectively. From the temperature and excitation dependencies of the observed peak intensities and energies, the radiative recombination mechanisms of the bands were attributed to transitions involving excitons bound to neutral and ionized acceptors. Good agreement of the defect level energies determined by PL and PC were noted, indicating that they were of the same origin. The defects were tentatively attributed to metal vacancies that form shallow acceptor levels. [ABSTRACT FROM AUTHOR]

The nature of ferroelectric domain dynamics in polydomain epitaxial barium titanate thin film was investigated using the linear electro-optic effect. The dynamic response was studied as a function of bias field under pulsed excitation. Upon removal of the bias pulse a millisecond long transient response was observed that is attributed to 90° domain reversal. The dynamic response and its field dependence are described by the Kohlrausch–Williams–Watts stretched exponential function in time with an average relaxation time <τ>. This average time for polarization reversal is a function of applied electric field E and is given by <τ>=τ0 exp(α/E), where τ0 is the prefactor and α is the activation field. The measured activation fields depended on bias. Activation fields of 2.0 and 0.7 V/μm measured under high and low bias conditions are comparable to those observed for bulk barium titanate. [ABSTRACT FROM AUTHOR]

Thermally stimulated depolarization current (TSDC) measurements were applied to investigate BaTiO3 single crystals with <100>, <110>, and <111> orientations, and annealed under different atmospheres, respectively. The TSDC peaks related to ferroelectric domain, ferroelectric–paraelectric phase transition, T i T i ′ − V Ö dipole relaxation and oxygen vacancy migration were observed from the TSDC spectra. The formation of oxygen vacancy clusters in BaTiO3 single crystals leads to a high dipole activation energy. The <111> crystalline face of BaTiO3 is more stable under external field than others. [ABSTRACT FROM AUTHOR]

Mg and Mn co-doped LaGa0.7-xMgxMn0.3O3 (x = 0, 0.05, 0.10, 0.15) ceramics were prepared by a solid-state reaction method. The electrical properties of the LaGa0.7-xMgxMn0.3O3 ceramics were studied in detail by dielectric spectra, impedance spectra, and I-V characteristic analysis. Colossal permittivity up to 104 could be obtained across the frequency range up to 104 Hz. The impedance analysis of the co-doped LaGaO3 ceramics indicated that the Mott's variable range hopping (VRH) polarization should be the main origin of colossal permittivity. Mg and Mn co-doping suppressed the formation of Mn3+ and enhanced the VRH polarization, resulting in increased permittivity. Partial localization of electrons by Mg reduced the long-range electron hopping and led to the decrease in dielectric loss. [ABSTRACT FROM AUTHOR]

Semiconductor γ-ray detectors have broad applications, yet finding superior detector materials is a challenge because of its contradictory requirements. Here, we investigated a large set of native defects in Cs2Hg6S7 that has been suggested as a promising candidate for detector materials. Using first-principles calculations, we showed that S-vacancy and HgCs-antisite defect provide life-time limiting deep levels, and Cs-vacancy forms a shallow acceptor level, resulting in low resistivity. To decrease such detrimental effects, concentrations of defects and carriers were examined in various chemical environments, which reveal that carrier densities can be extremely reduced by adjusting Cs partial pressure. [ABSTRACT FROM AUTHOR]

Nonlinear photonic crystal waveguide structures were fabricated from barium titanate thin films using nanolithography. A cascaded Bragg reflector using a strip waveguide was designed and analyzed. Both simulation and experimental results show that there is sufficient refractive index contrast to form a stop band by only etching through the Si3N4 strip layer. The band gap of the Bragg reflector can be engineered through control of the Bragg spacing, thickness, and etching depth of the strip layer. The transmission spectrum of the Bragg reflector waveguide was measured over the spectral range of 1500–1580 nm. A 27 nm wide stop band was obtained for a millimeter long sample. The nonlinear photonic crystal waveguides are potentially suitable as tunable filters, optical switches, and ultrawide bandwidth modulators. [ABSTRACT FROM AUTHOR]

Tellurium dioxide (TeO2) nanowires with a tetragonal structure have been grown by thermally evaporating tellurium metal at 400 °C in air. The nanowires produced have diameters ranging from 30 to 200 nm and have lengths of several tens of micrometers. Gas sensors were fabricated using the obtained TeO2 nanowires. The sensing behavior to NO2, NH3, and H2S gases at room temperature showed typical characteristics of a p-type semiconductor. The results demonstrate the potential to develop TeO2 nanowire based gas sensors with low power consumption. [ABSTRACT FROM AUTHOR]

Semiconductor γ-ray detectors have broad applications, yet finding superior detector materials is a challenge because of its contradictory requirements. Here, we investigated a large set of native defects in Cs2Hg6S7 that has been suggested as a promising candidate for detector materials. Using first-principles calculations, we showed that S-vacancy and HgCs-antisite defect provide life-time limiting deep levels, and Cs-vacancy forms a shallow acceptor level, resulting in low resistivity. To decrease such detrimental effects, concentrations of defects and carriers were examined in various chemical environments, which reveal that carrier densities can be extremely reduced by adjusting Cs partial pressure. [ABSTRACT FROM AUTHOR]