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The physical bases of the most commonly used methods for the one-dimensional calculation of direct-tunneling current in metal–oxide–semiconductor (MOS) structures (i.e., Bardeen’s approach, the resonant transfer matrix method, and transparency-based approximations) are discussed. Each of them is presented in detail, underlining in a simple way the basic principles. In particular, an original derivation for Bardeen’s approach is proposed. A comparison of the different methods is then carried out for the simple case of two square quantum wells, where analytical solutions can be given, and for actual MOS structures, taking into account quantization effects. It is shown that all these methods, despite the very different formalisms, are based on similar physical approaches and provide very close results. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Demonstrates the practicality of modeling the power law degradation observed in thin dielectrics after Fowler-Nordheim stress on the basis of a generalized trapping approach with trap cross-section and density profiles. Use of incomplete Gamma and generalized hypergeometric functions; Spatial distributions; Variation of the trapped oxide charge.

Presents a comprehensive study of the temperature dependence of the Fowler-Nordheim (F-N) tunnel emission in a metal-oxide-semiconductor structure. Influence of the electron concentration of a degenerate semiconductor on the amplitude of F-N current; Use of Sommerfeld expansion; Importance of F-N tunnel emission phenomenon in metal-oxide-semiconductor structures.

Presents a study which analyzed the impact of the oxide reliability on the endurance performance of nonvolatile memories. Kinds of mechanisms that have been identified as being responsible for the oxide degradation after charge injection; Typical endurance characteristics of FLOTOX electrically programmable read only memories cells as obtained on devices with different control gate coupling ratios.

An approach giving a physical understanding of the stress-induced leakage current (SILC) generation kinetics based on anode hole injection and hole dispersive transport in the oxide is presented. It is shown that the SILC is not directly correlated to the defects responsible for oxide breakdown. However, it is suggested that trapped holes can impact on the defect creation rate and, in turn, on the breakdown generation. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Presents a study of Ti-W/n-Si Schottky diodes used in fast very large scale integrated Schottky transistor logic. Current-voltage characteristics of the diodes; Defects parameters measured by deep level transient spectroscopy and used for simulation and barrier height as a function of interface trap densities; Transport mechanisms in a reverse biased Schottky diode with an interfacial layer.

An analytical and physically based expression of organic solar cell I-V characteristic under dark and illuminated conditions has been derived. This model has been found in very good agreement with both experimental data and drift-diffusion numerical simulations accounting for the coupling with Poisson equation and optical propagation. [ABSTRACT FROM AUTHOR]

Hot-carrier effects in offset gated n-channel polycrystalline silicon thin-film transistors of channel length L=10 μm and intrinsic offset lengths ΔL=0.5 and 1 μm are investigated. The gate- and drain-bias conditions for maximum device degradation were determined from substrate current measurements. The experimental data show that hot-carrier stress provokes an anomalous threshold voltage and on-state current degradation, exhibiting a “staircase-like” degradation with stress time. These results lead to the conclusion that, at the initial stages of stress, a small offset region from the drain end is damaged due to charging of the grain boundaries. As the stress proceeds further and the grain boundary traps are filled with electrons generated by impact ionization, the damage is transferred to the neighboring offset region, resulting in a staircase-like degradation of the device parameters with stress time. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

In short-channel silicon-on-insulator metal–oxide–semiconductor field-effect transistors, the condition for full depletion involves not only the body thickness and doping but also the channel length. The proximity of source and drain junctions reduces the apparent doping seen from the gate, which makes full depletion easier. Therefore, a transistor designed as partially depleted can behave as fully depleted. A simple analytical model for the length-doping transformation is proposed and validated by numerical simulations. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

A fast method for extracting the interface trap density profile of the semiconductor-insulator interface in metal-insulator-semiconductor structures is proposed. The method is based on the well known conductance technique and extracts the interface state density profile from the maximums of the parallel conductance versus applied gate bias curves, Gp(Va). In addition, this method is directly applicable to fully automated experimental setups available in industrial environments. [ABSTRACT FROM AUTHOR]

The annealing kinetics of stress-induced leakage current in ultrathin SiO[sub 2] has been quantitatively investigated after high temperature bakes. We have found that the defects at the origin of the stress induced-leakage current can be fully annihilated and that it is possible to generate and anneal them several times without deterioration of the oxide quality. Moreover, the activation energy and diffusion coefficient deduced from the recovery time constant of the annealing kinetics are found nearly independent of the oxide thickness. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

In this work, the leakage currents induced by electrical stress and by irradiation are compared. We show that the I[sub g]-V[sub g] characteristics of a 5.4-nm-thick oxide are very similar for both types of stresses. Moreover, we show that the electrical stability and the annealing behavior of the defects at the origin of the leakage current are very similar. We demonstrate that the radiation-induced leakage current can be fully annealed. Comparing the properties of the stress-induced leakage current and the radiation-induced leakage current, we believe that these currents are both due to the same type of defects which are supposed to be related to trapped holes. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]