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High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories. [ABSTRACT FROM AUTHOR]

The bilayer ambipolar organic field-effect transistors (OFETs) based on 1,8-naphthoylene (trifluoromethylbenzimidazole)-4,5-dicarboxylic acid imide (NTFBII)/pentacene heterojunction have been probed. The origin of the bias stress instability in the top n-channel is attributed to the electron trapping at the NTFBII/pentacene interface, whereas the bias stress effect in the bottom p-channel is associated mainly with the pentacene/dielectric interface. The contact resistances for electron and hole injection are strongly dependent on the local conductivity of the NTFBII and pentacene layers, respectively. The Cu penetration into NTFBII to form direct contact to pentacene is proposed to be the hole injection mechanism in the bilayer ambipolar OFETs. [ABSTRACT FROM AUTHOR]