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We propose an efficient version of ensemble Hartree–Fock/density functional theory to calculate a set of two charge-transfer states for systems with odd-numbers of electrons. The approach does require definitions of donor/acceptor fragments; however, the approach is not very sensitive to such definitions—even in the limit of very strong electronic coupling. The key ansatz is that, by mandating that the vector space spanned by the active orbitals projects equally onto the donor and acceptor fragments, such a constraint eliminates all intra-molecular local excitations and makes it far easier to generate potential energy surfaces that are smooth over a wide region of configuration space. The method is fast, working with only two electron configurations, and should be useful for ab initio non-adiabatic dynamics in the near future. [ABSTRACT FROM AUTHOR]

Within the context of fewest-switch surface hopping (FSSH) dynamics, one often wishes to remove the angular component of the derivative coupling between states J and K . In a previous set of papers, Shu et al. [J. Phys. Chem. Lett. 11, 1135–1140 (2020)] posited one approach for such a removal based on direct projection, while we isolated a second approach by constructing and differentiating a rotationally invariant basis. Unfortunately, neither approach was able to demonstrate a one-electron operator O ̂ whose matrix element J O ̂ K was the angular component of the derivative coupling. Here, we show that a one-electron operator can, in fact, be constructed efficiently in a semi-local fashion. The present results yield physical insight into designing new surface hopping algorithms and are of immediate use for FSSH calculations. [ABSTRACT FROM AUTHOR]

Modern electronic structure theory is built around the Born–Oppenheimer approximation and the construction of an electronic Hamiltonian H ̂ e l (X) that depends on the nuclear position X (and not the nuclear momentum P). In this article, using the well-known theory of electron translation (Γ′) and rotational (Γ″) factors to couple electronic transitions to nuclear motion, we construct a practical phase-space electronic Hamiltonian that depends on both nuclear position and momentum, H ̂ P S (X , P). While classical Born–Oppenheimer dynamics that run along the eigensurfaces of the operator H ̂ e l (X) can recover many nuclear properties correctly, we present some evidence that motion along the eigensurfaces of H ̂ P S (X , P) can better capture both nuclear and electronic properties (including the elusive electronic momentum studied by Nafie). Moreover, only the latter (as opposed to the former) conserves the total linear and angular momentum in general. [ABSTRACT FROM AUTHOR]

Metalized film capacitors in a.c. applications suffer high frequency and high voltage, which will induce electrode corrosion, leading to capacitance degradation. The intrinsic mechanism of the corrosion is oxidation caused by ionic migration in the oxide film formed on the electrode surface. In this work, a D–M–O illustration structure for the nanoelectrode corrosion process is established, and thereby, an analytical model is derived to study the influences of frequency and electric stress on corrosion speed in a quantitative approach. The analytical results well conform to the experimental facts. It is found the corrosion rate rises with frequency and finally tends to reach a saturation value. The electric field in oxide has an exponential-like contribution to the corrosion rate. In the case of aluminum metalized films, the saturation frequency and minimum field required for corrosion initiation are, respectively, 3434 Hz and 0.35 V/nm calculated by the proposed equations. [ABSTRACT FROM AUTHOR]

We show that the Berry force as computed by an approximate, mean-field electronic structure can be meaningful if properly interpreted. In particular, for a model Hamiltonian representing a molecular system with an even number of electrons interacting via a two-body (Hubbard) interaction and a spin–orbit coupling, we show that a meaningful nonzero Berry force emerges whenever there is spin unrestriction—even though the Hamiltonian is real-valued and formally the on-diagonal single-surface Berry force must be zero. Moreover, if properly applied, this mean-field Berry force yields roughly the correct asymptotic motion for scattering through an avoided crossing. That being said, within the context of a ground-state calculation, several nuances do arise as far interpreting the Berry force correctly, and as a practical matter, the Berry force diverges near the Coulson–Fischer point (which can lead to numerical instabilities). We do not address magnetic fields here. [ABSTRACT FROM AUTHOR]

An erratum has been issued for an article titled "On the meaning of Berry force for unrestricted systems treated with mean-field electronic structure." The mistake is in Equation (9), which should read as h1 = 0.1 tanh(x), h2 = -0.1 (tanh(x) - 1). However, this typo does not impact the conclusions of the article. The authors acknowledge the error and thank those who brought it to their attention. [Extracted from the article]

An experimental apparatus was designed to study the non-shock initiation reaction evolution process of a HMX (cyclotetramethylenete-tranitramine)-based pressed PBX (Plastic Bonded Explosive)-A column under the main constraint of the inertial mass of the explosive bulk, with strong bottom and circumferential confinements and with the strength of a PMMA plate cover as the threshold to control the internal reaction pressure. The HMX-based pressed PBX-A column was ignited by black powder. The experimental results show that the reaction violence was quite mild, and the estimated amount of explosive consumed at the time of the PMMA plate cracking was only 1.8% of the thickness. The velocity curve of the constrained surface shows that the internal reaction pressure at the initial stage of the structural deformation shows the "quasi-isobaric" characteristic, and the estimated reaction pressure at this stage was about 157.41 MPa. [ABSTRACT FROM AUTHOR]

For a system without spin–orbit coupling, the (i) nuclear plus electronic linear momentum and (ii) nuclear plus orbital electronic angular momentum are good quantum numbers. Thus, when a molecular system undergoes a nonadiabatic transition, there should be no change in the total linear or angular momentum. Now, the standard surface hopping algorithm ignores the electronic momentum and indirectly equates the momentum of the nuclear degrees of freedom to the total momentum. However, even with this simplification, the algorithm still does not conserve either the nuclear linear or the nuclear angular momenta. Here, we show that one way to address these failures is to dress the derivative couplings (i.e., the hopping directions) in two ways: (i) we disallow changes in the nuclear linear momentum by working in a translating basis (which is well known and leads to electron translation factors) and (ii) we disallow changes in the nuclear angular momentum by working in a basis that rotates around the center of mass [which is not well-known and leads to a novel, rotationally removable component of the derivative coupling that we will call electron rotation factors below, cf. Eq. (96)]. The present findings should be helpful in the short term as far as interpreting surface hopping calculations for singlet systems (without spin) and then developing the new surface hopping algorithm in the long term for systems where one cannot ignore the electronic orbital and/or spin angular momentum. [ABSTRACT FROM AUTHOR]

Here, we report a novel method for the fabrication of polydimethylsiloxane microdevices with complicated 3-D structures, such as concave and crater shapes, using an easily machined polymethyl methacrylate mold combined with a one-step molding process. The procedure presented here enables rapid preparation of complex 3-D microstructures varying in shape and dimensions. To regulate embryoid body (EB) formation, we fabricated a microfluidic device with an array of concave microwells and found that EBs growing in microwells maintained their shape, viability, and a high degree of homogeneity. We believe that this novel method provides an alternative for rapid prototyping, especially in fabricating devices with curved 3-D microstructures. [ABSTRACT FROM AUTHOR]