1. Si/SiO2 resonant cavity photodetector.
- Author
-
Diaz, D. C., Schow, C. L., Qi, Jieming, Campbell, J. C., Bean, J. C., and Peticolas, L. J.
- Subjects
- *
PHOTODIODES , *METAL crystal growth - Abstract
It has been shown earlier that GeSi/Si resonant-cavity photodiodes can achieve high speed without sacrificing quantum efficiency. In this letter, we report a Si-based resonant-cavity photodiode that utilizes a Si/SiO2 Bragg reflector. This structure is more compatible with standard Si processing technology than the GeSi/Si resonant-cavity photodiodes. The absorbing region is a 1-μm-thick polysilicon layer that has been annealed to enhance secondary grain growth and the bottom mirror consists of three quarter-wavelength pairs of Si and SiO2. After annealing the dark current was 9 μA at 1 V, the peak quantum efficiency was 44%, and the bandwidth was >=1.4 GHz. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 1996
- Full Text
- View/download PDF