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In this work, we carried out a numerical study on the role of thermal capture cross sections in impurity photovoltaic (IPV) effect for silicon solar cells doped with indium. The short-circuit current density, the open-circuit voltage and the conversion efficiency of the IPV cell were calculated in dependence of variable electron and hole thermal capture cross sections of indium in silicon. We found that the thermal capture cross section of electron is crucial to the device performance and that of hole has few influence on the cell property for this IPV cell since acceptor-type indium impurity level is near the valence band edge. If the electron thermal capture cross section is less than 10-20 cm2, a positive gain of conversion efficiency for the IPV cell would be presented. We concluded that those impurities with small electron (or hole) thermal capture cross sections may be suitable for use in the IPV cell with acceptor-type (or donor-type) impurity level near the valence (or conduction) band edge. These results may help to evaluate the potential of the IPV effect for improving cell efficiency according to the thermal capture cross sections of the impurity in host semiconductor. [ABSTRACT FROM AUTHOR]

Analyzes giant magnetoresistance properties in granular type (Co-Ag)/Ag multilayers with different Co content and sublayer thickness. Information on the deposits of thick single layer Co-Ag granular films and granular type multilayers; Examination of the typical spectrum of low angle-x-ray diffraction and high angle x ray; Information on the dependence of MR value on the bilayer number for Co65Ag35 multilayers.

Presents a study that examined silicon- and silicon + phosphorus-implanted indium-phosphorus using low-temperature photoluminescence. Appearance of a broadband in photoluminescence spectra for silicon-implanted indium-phosphorus after annealing; Intensity of the broadband; Temperature dependence of the photoluminescence.

Dual implantations of 150 keV Si+ ions and 160 keV P+ ions with the same dose of 1×1015/ cm2 were performed at 200 °C. Si3 N4 encapsulated samples were annealed in a conventional furnace or a halogen tungsten lamp rapid thermal annealing system. The carrier concentration profiles show that the Si dopant is highly activated and its indiffusion is effectively reduced with the help of P+ implantation and rapid thermal annealing. The highest carrier concentration of 5×1019 /cm3 , corresponding to an activation of 70%, an average electron mobility of 750 cm2 /V s, and a sheet resistance of 11 Ω/[Laplacian_variant], has been obtained in Si+ and P+ dually implanted InP after rapid thermal annealing at 850 °C for 5 s. [ABSTRACT FROM AUTHOR]