1. RF Noise Modeling in SiGe HBTs.
- Author
-
Niu, Guofu, Xia, Kejun, Sheridan, David, and Sweeney, Susan
- Subjects
ELECTRIC noise ,ELECTRONICS ,SEMICONDUCTORS ,ELECTRICAL engineering ,DIGITAL electronics ,LOGIC circuits - Abstract
This paper presents RF noise modeling in advanced SiGe HBTs using experimental data from 2 to 26 GHz. Several widely used noise models are evaluated, including the conventional SPICE model, the Van Vliet model, the transport noise model, and a recently developed extraction based model. The connections between various models are investigated. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]
- Published
- 2005
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