1. Adsorption-controlled growth of homoepitaxial c-plane sapphire films.
- Author
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Majer, Lena N., Acartürk, Tolga, van Aken, Peter A., Braun, Wolfgang, Camuti, Luca, Eckl-Haese, Johan, Mannhart, Jochen, Onuma, Takeyoshi, Rabinovich, Ksenia S., Schlom, Darrell G., Smink, Sander, Starke, Ulrich, Steele, Jacob, Vogt, Patrick, Wang, Hongguang, and Hensling, Felix V. E.
- Subjects
HOMOEPITAXY ,OPTICAL properties ,SAPPHIRES ,CRYSTALLINITY ,DENSITY - Abstract
Sapphire is a technologically highly relevant material, but it poses many challenges when performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties, such as a single-crystal-like bandgap and a low density of F
+ centers. [ABSTRACT FROM AUTHOR]- Published
- 2024
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