1. Low turn-on voltage and 2.3 kV β-Ga2O3 heterojunction barrier Schottky diodes with Mo anode.
- Author
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Su, Chunxu, Zhou, Hong, Zhang, Kun, Wang, Chenlu, Sun, Sihan, Gong, Hehe, Ye, Jiandong, Liu, Zhihong, Dang, Kui, Hu, Zheyuan, Zhang, Xiaodong, Wei, Jie, Luo, Xiaorong, Zhang, Jincheng, Zhang, Rong, and Hao, Yue
- Subjects
SCHOTTKY barrier diodes ,BREAKDOWN voltage ,SCHOTTKY barrier ,POWER electronics ,LOW voltage systems ,HETEROJUNCTIONS ,MOLYBDENUM - Abstract
In this work, we propose combining a low work function anode metal and junction barrier Schottky structure to simultaneously achieve low turn-on voltage (V
on ) and high breakdown voltage (BV), which alleviates the dilemma that high BV requires high Schottky barrier height (SBH) and high Von . Molybdenum (Mo) is used to serve as the anode metal to reduce the SBH and facilitate fast turn-on to achieve a low Von . To resolve the low SBH related low BV issue, a p-NiO/n-Ga2 O3 -based heterojunction structure is used to enhance β-Ga2 O3 sidewall depletion during the reverse state to improve the BV. With such a design, a low Von = 0.64 V(@1A/cm2 ) and a high BV = 2.34 kV as well as a specific on-resistance (Ron,sp ) of 5.3 mΩ cm2 are demonstrated on a 10 μm-drift layer with a doping concentration of 1.5 × 1016 cm−3 . β-Ga2 O3 JBS diodes with low Von = 0.64 V and a power figure of merit of 1.03 GW/cm2 show great potential for future high-voltage and high-efficiency power electronics. [ABSTRACT FROM AUTHOR]- Published
- 2024
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