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Presents a study that examined the transitions in the spectra of as-grown gallium arsenide/aluminum-gallium arsenide quantum wells using piezoreflectance. Methodology; Comparison of the piezoreflectance and photoreflectance of the samples; Determination of the transition energies from the pizeoreflectance.

Presents a study that measured the in-well ambipolar diffusion coefficients and carrier lifetimes in ordered all-binary quantum wells composed of indium-arsenic-gallium arsenide short-period strained-layer superlattices (SPSLS) grown on gallium arsenide substrates. Use of picosecond optically induced transient grating and pump-probe techniques; Exhibition of a higher in-plane hole mobilities of quantum wells containing SPSLS.

Presents a study which investigated the optical properties of high quality In[subx[Ga[sub1] - [subx]As/GaAs single quantum wells. Theoretical considerations; Experimental techniques in molecular beam epitaxial growth; Results of measurements on the photoluminescence spectra from single quantum wells.

A mid-IR (3.3-3.5 µm) type-II interband cascade laser has been demonstrated at temperatures up to 300 K in pulsed mode and 150 K in cw mode. Threshold current densities as low as 13.2 A/cm² and power efficiencies as large as 17% have been achieved under cw conditions at 80 K. [ABSTRACT FROM AUTHOR]

The piezoreflectance technique has been used to optically characterize resonant tunneling structures that utilize isolated single quantum wells. The heavy- and light-hole transitions associated with the quantum wells were prominent in the spectra of samples with barrier widths ranging from 50 to 34 Å. Their spectral positions depended not only on quantum well and barrier thicknesses, but also significantly on the amount of carrier confinement produced by barrier height. Furthermore, variations in the magnitude of impurity transitions could be observed in the spectra of different samples. [ABSTRACT FROM AUTHOR]