1. Controlling of the Dirac band states of Pb-deposited graphene by using work function difference.
- Author
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Tsujikawa, Y., Sakamoto, M., Yokoi, Y., Imamura, M., Takahashi, K., Hobara, R., Uchihashi, T., and Takayama, A.
- Subjects
ELECTRON work function ,SCANNING tunneling microscopy ,PHOTOELECTRON spectroscopy ,FERMI level ,GRAPHENE - Abstract
We have performed scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in Pb-deposited bilayer graphene (BLG) on the SiC(0001) substrate to investigate the dependence of the electronic structures on the Pb-deposition amount. We have observed that the Pb atoms form islands by STM and the π bands of the BLG shift toward the Fermi level by ARPES. This hole-doping-like energy shift is enhanced as the amount of Pb is increased, and we were able to tune the Dirac gap to the Fermi level by 4 ML deposition. Considering the band dispersion, we suggest that the hole-doping-like effect is related to the difference between the work functions of Pb islands and BLG/SiC; the work function of BLG/SiC is lower than that of Pb. Our results propose an easy way of band tuning for graphene with an appropriate selection of both the substrate and deposited material. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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