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Exchange bias (EB) is normally created by the interfacial exchange coupling at a ferromagnetic/antiferromagnetic (FM/AFM) interface. FM/AFM interfaces have also been proved to perform enhanced spin angular momentum transfer efficiency in spin pumping (SP), compared with typical FM/nonmagnetic interfaces. Here, we report an unexpected EB and enhanced SP between a ferromagnet and semiconductor. Considerable EB has been observed in Co films grown on ZnO single crystal due to the interface antiferromagnetism of the Zn1−xCoxO (x depends on the Co solubility limit in ZnO) layer. Moreover, SP measurements demonstrate a giant spin pumping efficiency at the Co/ZnO interface with a bump (spin mixing conductance G eff ↑ ↓ = 28 nm−2) around the blocking temperature TB ∼ 75 K. The enhanced SP is further confirmed by inverse spin Hall effect measurements and the spin Hall angle θ ISHE of Zn1−xCoxO is estimated to be 0.011. The bound magnetic polarons with s–d exchange interaction between donor electrons and magnetic cation ions in Zn1−xCoxO play a key role in the formation of antiferromagnetism with giant G eff ↑ ↓ . Our work provides a new insight into spin physics at FM/semiconducting interfaces. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) allotropes of tellurium (Te), recently coined as tellurene, are currently an emerging topic of materials research due to the theoretically predicted exotic properties of Te in its ultrathin form and at the single atomic layer limit. However, a prerequisite for the production of such new and single elemental 2D materials is the development of simple and robust fabrication methods. In the present work, we report three different 2D superstructures of Te on Au(111) surfaces by following an alternative experimental deposition approach. We have investigated the superstructures using low-temperature scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy (AES), and field emission AES. Three superstructures (13 × 13, 8 × 4, and √11 × √11) of 2D Te are observed in our experiments, and the formation of these superstructures is accompanied by the lifting of the characteristic 23 × √3 surface reconstruction of the Au(111) surface. Scanning tunneling spectroscopy reveals a strong dependence of the local electronic properties on the structural arrangement of the Te atoms on the Au(111) support, and we observe superstructure-dependent electronic resonances around the Fermi level and below the Au(111) conduction band. In addition to the appearance of the new electronic resonances, the emergence of band gaps with a p-type charge character has been evidenced for two out of three Te superstructures (13 × 13 and √11 × √11) on the Au(111) support. [ABSTRACT FROM AUTHOR]

Arc-discharge synthesized multiwalled carbon nanotubes (AD-MWNT), or related MWNTs, exhibit a good quality compared to the more common type of MWNT synthesized by catalytic chemical vapor deposition methods. Yet experimental measurements on these are rather few and typically have not correlated data from different measurement techniques. Here, the authors report Raman spectroscopy, scanning probe microscopy, conductivity measurements, and force microscopy on single AD-MWNTs. The results demonstrate the high quality of AD-MWNTs and are compatible with the view of them as the best approximation of MWNTs as an assembly of defect-free concentric individual single-walled carbon nanotubes. The authors also demonstrate conductance measurements over a step on the surface of an AD-MWNT, which is due to an abruptly broken outer layer(s), whereby the interlayer resistance is measured. [ABSTRACT FROM AUTHOR]

In-plane compressively strained α-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity, and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained α-Sn films on InSb(100), without heating the substrate during growth nor using any dopants. The α-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy, and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed us to obtain an improved insight into the electronic structure of the 3D topological Dirac semimetal α-Sn above the Fermi level. [ABSTRACT FROM AUTHOR]

The electric field emission behavior of vertically aligned few-layer graphene was studied in a parallel plate–type setup. Few-layer graphene was synthesized in the absence of any metallic catalyst by microwave plasma enhanced chemical vapor deposition with gas mixtures of methane and hydrogen. The deposit consists of nanostructures that are several micrometers wide, highly crystalline stacks of four to six atomic layers of graphene, aligned vertically to the substrate surface in a high density network. The few-layer graphene is found to be a good field emitter, characterized by turn-on fields as low as 1 V/μm and field amplification factors up to several thousands. We observe a clear dependence of the few-layer graphene field emission behavior on the synthesis parameters: Hydrogen is identified as an efficient etchant to improve field emission, and samples grown on titanium show lower turn-on field values and higher amplification factors when compared to samples grown on silicon. [ABSTRACT FROM AUTHOR]

The training effect in polycrystalline exchange bias Co/CoO bilayers has been investigated with low-temperature magnetic force microscopy (MFM). After field cooling the bilayer to 13 K, no MFM contrast was detected but a clear MFM contrast related to the domain structure appears after the first magnetization reversal of the ferromagnetic Co layer. Once formed, the ferromagnetic domains survive even at very large fields and cannot be erased by the application of a magnetic field along the cooling field direction. On the other hand, it is possible to partially remove the magnetic domains by performing a hysteresis loop with a magnetic field perpendicular to the cooling field direction. [ABSTRACT FROM AUTHOR]

The intrinsic domain wall resistance (DWR) of 180° Néel walls in a polycrystalline Fe film is determined by creating a periodic domain pattern, obtained by locally inducing exchange bias. After field cooling, the coercivity is spatially modulated, resulting in periodic 180° domain walls. To determine the intrinsic DWR, a rotating magnetic field is used to reversibly create and annihilate the domain walls. After correcting for the anisotropic magnetoresistance, the extracted DWR is positive. [ABSTRACT FROM AUTHOR]

We studied surface morphology and magnetic properties of Fe/MgO(001) films deposited at an angle varying between 0° and 60° with respect to the surface normal and with azimuth along the Fe[010] or the Fe[110] direction. Due to shadowing, elongated grains appear on the film surface for deposition at sufficiently large angle. X-ray reflectivity reveals that, depending on the azimuthal direction, films become either rougher or smoother for oblique deposition. For deposition along Fe[010] the pronounced uniaxial magnetic anisotropy (UMA) results in the occurrence of “reversed” two-step and of three-step hysteresis loops. For deposition along Fe[110] the growth-induced UMA is much weaker, causing a small rotation of the easy axes. [ABSTRACT FROM AUTHOR]

Grazing-incidence Ar+ ion sputtering has been used to produce nanoscale ripples on the surface of the Fe/Mg(001) system. This way, a uniaxial anisotropy with both controllable strength and orientation can be superimposed on top of the cubic anisotropy, resulting in Fe/MgO(001) films with unusual anisotropy symmetry. By combining longitudinal and transverse Kerr-effect measurements, different switching processes are revealed. Depending on the orientation of the external magnetic field, one-jump, two-jump, and “reverse” two-jump magnetization reversals can be observed. A simple model, which takes into account the relevant anisotropy energies, is developed to explain the experimentally observed switching fields and to evaluate the domain wall pinning energies of the sputtered sample. [ABSTRACT FROM AUTHOR]

Nanoparticles of different materials are already in use for many applications. In some applications, these nanoparticles need to be deposited on a substrate in a fast and reproducible way. We have developed a new direct liquid injection system for nanoparticle deposition by chemical vapor deposition using a liquid nanoparticle precursor. The system was designed to deposit nanoparticles in a controlled and reproducible way by using two direct liquid injectors to deliver nanoparticles to the system. The nanoparticle solution is first evaporated and then the nanoparticles flow onto a substrate inside the vacuum chamber. To allow injection and evaporation of the liquid, a direct liquid injection and vaporization system are mounted on top of the process chamber. The deposition of the nanoparticles is controlled by parameters such as deposition temperature, partial pressure of the gases, and flow rate of the nanoparticle suspension. The concentration of the deposited nanoparticles can be varied simply by changing the flow rate and deposition time. We demonstrate the capabilities of this system using gold nanoparticles. The selected suspension flow rates were varied between 0.25 and 1 g/min. AFM analysis of the deposited samples showed that the aggregation of gold nanoparticles is well controlled by the flow and deposition parameters.