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Presents a study that performed rapid thermal annealing (RTA) for i-MeV arsenic-ion-implanted layers in silicon. Application of high-energy implantation in silicon; Preparation of the arsenic samples; Analysis of the Rutherford backscattering spectra for implanted silicon samples before and after RTA.

Presents information on a study which examined the transverse magnetoresistance of a dysprosium nickel single crystal. Methodology; Results and discussion; Conclusions.

Demonstrates a InGaAsP/InP horizontal cavity surface-emitting laser. Components and structure of the laser device; Fabrication of mirror facets using reactive ion-beam etching process; Values for the threshold current and output power achieved at room temperature; Orientation of the laser opposite light emitting directions.