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Spin–orbit torque (SOT) can provide efficient electrical manipulation of magnetism via applying electrical current to breaking the symmetry of damping-like torque. In the heterojunction of heavy and ferromagnetic metal, Dzyaloshinskii–Moriya interaction (DMI) is one of the key ingredients for stabilizing chiral spin structures, like chiral domain walls. Meanwhile, materials with larger charge-spin conversion rates are also highly expected for the efficient SOT. In this paper, spin–orbit torque magnetic switching is observed in the perpendicularly magnetized Pt/Co/Bi2Se3 and shows relatively high efficiency with low critical switching current density of about 5 × 105 A cm−2. The SOT efficiency and DMI in perpendicularly magnetized Pt/Co/Bi2Se3 were quantitatively investigated by electrical detection of the effective spin Hall field. The DMI constant is about 2.6 mJ m−2, and the effective spin Hall angle of Pt/Co/Bi2Se3 is about 0.14. The work also demonstrates that the Bi2Se3 layer takes the main responsibility for SOT, and the Pt/Co interface is the main source of DMI in Pt/Co/Bi2Se3 structures, which makes it possible to achieve independent optimization of DMI and SOT in the Pt/Co/Bi2Se3 structure at room temperature for the advanced application of spintronic devices. [ABSTRACT FROM AUTHOR]

Spin–orbit torque (SOT) can provide efficient electrical manipulation of magnetism via applying electrical current to breaking the symmetry of damping-like torque. In the heterojunction of heavy and ferromagnetic metal, Dzyaloshinskii–Moriya interaction (DMI) is one of the key ingredients for stabilizing chiral spin structures, like chiral domain walls. Meanwhile, materials with larger charge-spin conversion rates are also highly expected for the efficient SOT. In this paper, spin–orbit torque magnetic switching is observed in the perpendicularly magnetized Pt/Co/Bi2Se3 and shows relatively high efficiency with low critical switching current density of about 5 × 105 A cm−2. The SOT efficiency and DMI in perpendicularly magnetized Pt/Co/Bi2Se3 were quantitatively investigated by electrical detection of the effective spin Hall field. The DMI constant is about 2.6 mJ m−2, and the effective spin Hall angle of Pt/Co/Bi2Se3 is about 0.14. The work also demonstrates that the Bi2Se3 layer takes the main responsibility for SOT, and the Pt/Co interface is the main source of DMI in Pt/Co/Bi2Se3 structures, which makes it possible to achieve independent optimization of DMI and SOT in the Pt/Co/Bi2Se3 structure at room temperature for the advanced application of spintronic devices. [ABSTRACT FROM AUTHOR]

This study investigates the magnetic dynamics of a ferroelectric/ferromagnetic heterostructure mediated by a charge/strain-induced magnetoelectric interaction that exhibits a pronounced dynamic magnetic response to an electric field. In the experimental process, the epitaxial strain gave rise to electrically tunable uniaxial magnetic anisotropy, and spin accumulation at the interface led to large anisotropic damping with a C 2 υ symmetry. The results show the significant potential for applications of composite multiferroics and provide a feasible approach for high-performance devices that rely on electrically controlled magnetism. [ABSTRACT FROM AUTHOR]

CoZr columnar structured magnetic films were fabricated by oblique sputtering onto porous aluminum oxide substrates with different oblique angles. The scanning electron microscope images showed the formation of columnar structure and nanoporous structure was disappeared with increasing oblique angle. The static magnetic properties showed larger coercivity and lower magnetization squareness due to columnar structure resulted from nanopores. Dynamic magnetic properties were determined by effect of holes and oblique sputtering. Enhanced microwave absorption was obtained by complex permeability measurement, which line width of columnar film increased 1.4 GHz comparing with 0.5 GHz of continuous film. Therefore, it is an effective way to get the adjustable anisotropy field and line width, which is desirable for obtaining the high resonance and high permeability ferromagnetic film materials for high frequency application. [ABSTRACT FROM AUTHOR]