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We report on the magnetic coupling behavior in all-ferromagnetic La0.7Sr0.3MnO3/SrRuO3 (LSMO/SRO) heterostructures deposited on the SrTiO3 (111) substrate, where the interface leads to an enhanced exchange field as compared to the one deposited on SrTiO3 (001). Importantly, high-resolution scanning transmission electron microscopy reveals distinct interface structures of the (111) heterostructures depending on the growth sequence. The heterostructure with an SRO bottom layer shows an atomically flat and abrupt interface, while the one with an LSMO bottom layer shows a deformed interface due to the surface roughening of LSMO deposited directly on SrTiO3 (111). As a result, the heterostructure with an abrupt interface exhibits a robust antiferromagnetic coupling between LSMO and SRO, while the one with a rough interface shows negligible magnetic coupling. Our results demonstrate the key role of an abrupt interface in determining the magnetic properties of oxide heterostructures. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe2 and RbV3Sb5, by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strains imposed on MoTe2 and RbV3Sb5, respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance—the Shubnikov–de Haas (SdH) effect—are obtained in both samples. In strained MoTe2, the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field, whereas in strained RbV3Sb5, two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions. [ABSTRACT FROM AUTHOR]

Time-delayed reservoir computing (RC) equipped with prominent superiorities such as easy training and friendly hardware implementation is identified as a high-efficient answer to complex temporal tasks, and thereby draws increasing attention. Oxygen ion-based oxide electrolyte-gated transistor (Ox-EGT) with rich ion dynamic characteristics is deemed as a promising candidate for RC. However, it is still a challenge to produce the required dynamic characteristics for RC implementation. Herein, we develop an Ox-EGT with an oxygen vacancy-electron-coupled electric-double-layer at the electrolyte/channel interface to implement time-delayed RC. Effects of oxygen vacancy concentration on the short-term plasticity are investigated, revealing the optimal concentration range of oxygen vacancies for the dynamic characteristics improvement. The underlying physical mechanism is demonstrated by TCAD simulations. Simulations using the waveform classification and handwritten-digit recognition tasks validate the good information processing ability of the Ox-EGT RC system. These results provide a promising approach to exploit Ox-EGT dynamics for large-scale and energy-efficient neuromorphic computing hardware. [ABSTRACT FROM AUTHOR]

Materials with AV3Sb5 (A = K, Rb, Cs) stoichiometry are recently discovered kagome superconductors with the electronic structure featuring a Dirac band, van Hove singularities, and flat bands. These systems undergo anomalous charge-density-wave transitions at T CDW ∼ 80 – 100 K, resulting in the reconstruction of the Fermi surface from the pristine phase. Although comprehensive investigations of the electronic structure via quantum oscillations (QOs) have been performed on the sister compounds CsV3Sb5 and RbV3Sb5, a detailed QO study of KV3Sb5 is so far absent. Here, we report the Shubnikov–de Haas QO study in KV3Sb5. We resolve a large number of new frequencies with the highest frequency of 2202 T (occupying ∼54% of the Brillouin zone area in the kx–ky plane). The Lifshitz-Kosevich analysis further gives relatively small cyclotron effective masses, and the angular dependence study reveals the two-dimensional nature of the frequencies with a sufficient signal-to-noise ratio. Finally, we compare the QO spectra for all three AV3Sb5 compounds collected under the same conditions, enabling us to point out the similarities and the differences across these systems. Our results fill in the gap of the QO study in KV3Sb5 and provide valuable data to understand the band structure of all three members of AV3Sb5. [ABSTRACT FROM AUTHOR]

For the first time, a core drain current model based on surface potential without any implicit functions is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs). The surface potential solution is analytically deduced by solving the Poisson equation with appropriate simplification assumptions in accumulation, partial-depletion, and full-depletion modes. Then, the drain current expression is analytically derived from the Pao–Sah integral as a function of the mobile charge density obtained from the surface potential at the source and drain terminals. In addition, nonlinear resistors in the source/drain access region are considered. It continuously predicts the characteristics of β-Ga2O3 power MOSFETs in all operation modes, including accumulation mode, partial-depletion mode, and full-depletion mode. Furthermore, the validity of the model is verified by comparing the results of the model with the numerical simulations carried out with the technology computer-aided design (TCAD) tool ATLAS Device Simulator from Silvaco. Good agreement between the proposed model and TCAD simulations is shown for β-Ga2O3 power MOSFETs with different intrinsic channel lengths, channel doping concentrations, and channel thicknesses. Ultimately, the Gummel symmetry test and the harmonic balance simulation test are performed to validate the model's robustness and convergence. [ABSTRACT FROM AUTHOR]

In the presence of structural disorders, carrier conduction via localized hopping sites emerges in two-dimensional systems and results in a unique thermopower characteristic with T1/3 dependence. The disorders induced potential differences of hopping sites leading to energy variations along current-carrying paths. A systematic thermoelectric study is presently required in comprehending the statistical effects. Therefore, we proposed a statistical model of the Seebeck coefficient on the basis of percolation theory and hopping mechanisms. With this model, the carrier density and temperature dependences can be practically predicted. Key parameters can be extracted by calibration to molybdenum disulfide and black phosphorus experiments, providing a deeper insight into device physics. Moreover, a Mott-like analytical model is developed to investigate the parametric dependence. The thermopower deviations from the noninteracting Mott picture at high and low temperatures are analyzed. Finally, the temperature dependence on the thermoelectric figure of merit is evaluated in a variable range hopping regime. Our model is essential for a reliable prediction of the disorder induced statistical effects on thermoelectric behaviors, which guides both device optimization and material engineering. [ABSTRACT FROM AUTHOR]

A surface potential based compact model for two-dimensional field effect transistors (2D-FETs) is proposed to incorporate the structural disorders induced transition behaviors among variable range hopping (VRH), nearest neighbor hopping (NNH), and band-like transport in most 2D materials. These functions coupled with effective transport energy and multiple trapping and releasing theory enable our developed model to predict the temperature and carrier density dependent current characteristics. Its validity is confirmed by the experimental results such as the metal insulator transition (MIT) in transition metal dichalcogenides and VRH-NNH transition in black phosphorus nanoribbon. Based on this model, the band-tail effects on the crossover gate voltage of MIT behavior are quantitatively investigated. It is found that the transition behavior is closely related to the distribution of the band-tail states. Furthermore, this model is implemented in Verilog-A for circuit-level prediction and evaluation of 2D-FETs to provide deeper insight into the relationship between material properties, device physics, and circuit performances. [ABSTRACT FROM AUTHOR]

Effective control of magnetic anisotropy is important for developing spintronic devices. In this work, we performed a case study of stacking periods (N)-mediated reorientation of lateral magnetic anisotropy in ultrathin La0.67Ca0.33MnO3/SrRuO3 superlattices. As N increases from 1 to 15, the magnetic easy-axis switches from the orthorhombic [010] to [100]-axis. The maximum anisotropy constant of the superlattice (SL) (N = 15) reaches −1.83 × 105 erg/cm3. X-ray absorption spectroscopy and x-ray linear dichroism further suggest that the observed changes in lateral magnetic anisotropy are driven by in-plane orbital polarization. For SLs with small N, anisotropic strain-induced orbital polarization along the b-axis can result in the [010]-oriented magnetic easy axis. For SLs with large N, the dimension crossover from 2-dimension to 3-dimension could enhance the hybridization of Ru t2g and Mn d x 2 − y 2 orbitals, which can compete with the strain effect and switch the magnetic easy axis to [100]. Our results suggest a potential strategy for engineering magnetic anisotropy through the cooperation of strain engineering and interfacial orbital engineering. [ABSTRACT FROM AUTHOR]

Pressure calibration for most diamond-anvil cell (DAC) experiments is mainly based on the ruby scale, which is key to implementing this powerful tool for high-pressure study. However, the ruby scale can often hardly be used for programmably controlled DAC devices, especially the piezoelectric-driving cells, where a continuous pressure calibration is required. In this work, we present an effective pressure gauge for DACs made of Manganin metal based on the four-probe resistivity measurements. Pressure dependence of its resistivity is well established and shows excellent linear relations in the 0–30 GPa pressure range with a slope of 23.4 (9) GPa for the first-cycle compression, in contrast to that of multiple-cycle compression and decompression having a nearly identical slope of 33.7 (4) GPa likely due to the strain effect. In addition, the such-established Manganin scale can be used for continuously monitoring the cell pressure of piezoelectric-driving DACs, and the reliability of this method is also verified by the fixed-point method with a Bi pressure standard. Realization of continuous pressure calibration for programmably controlled DACs would offer many opportunities for the study of dynamics, kinetics, and critical behaviors of pressure-induced phase transitions. [ABSTRACT FROM AUTHOR]

The effect of deposition oxygen pressure (PO) on phase separation (PS) induced in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films was investigated. Fully oxygenated films grown at high PO are anisotropically strained. They exhibit PS over a wide temperature range, because of the large orthorhombicity of NdGaO3 substrates. The paramagnetic insulator-to-ferromagnetic metal (FM) and FM-to-antiferromagnetic insulator (AFI) transitions gradually shift to lower temperatures with decreasing PO. The AFI state is initially weakened (PO ≥ 30 Pa), but then becomes more robust against the magnetic field (PO < 30 Pa). The out-of-plane film lattice parameter increases with decreasing PO. For films grown at PO ≥ 30 Pa, the slight oxygen deficiency may enlarge the lattice unit cell, reduce the anisotropic strain, and suppress the AFI state. Films deposited at PO < 30 Pa instead experience an average compressive strain. The enhanced compressive strain and structural defects in the films may lead to the robust AFI state. These results aid our understanding of PS in manganite films. [ABSTRACT FROM AUTHOR]

The advent of a large-volume high-pressure apparatus has led to the discovery of many new materials with exceptional properties for widespread applications such as superhard materials (e.g., diamonds). However, for most conventional devices, the pressure and temperature capabilities are often limited to 6 GPa and 2300 K, which severely impedes the study of materials at extended pressures and temperatures. In this work, we present experimental optimizations of the high-pressure cell assembly for cubic press with a focus on the improvement of its temperature capability, leading to a record temperature value of ∼4050 K and largely extended pressure conditions up to ∼10 GPa with a centimeter-sized sample volume. Pressures of the new assembly at high temperatures are investigated by the melting-point method, giving rise to a series of parallel isoforce loading lines associated with thermally induced pressure. For the first time, the high-pressure melting curve of tungsten carbide is determined up to 3800 K and 8 GPa, and single-crystal refractory materials of Mo, Ta, and WC are also grown using the optimized cell. [ABSTRACT FROM AUTHOR]

Electron-electron (e-e) correlation and spin-orbit coupling (SOC) are two essential control parameters that determine the physical properties of transition-metal-oxide-based thin films and heterostructures. Here, by harnessing these two parameters, we report the systematic control of both ferromagnetism and in-plane magnetic anisotropy in La0.67Ca0.33MnO3/CaIr1-xRuxO3 (LCMO/CIRO) superlattices grown on NdGaO3 substrates. In these all-oxide epitaxial systems, we demonstrate that the e-e correlation and the SOC depend strongly on the chemical composition of CIRO layers. By simply increasing the Ru doping level x, we can significantly suppress the degradation of ferromagnetism in ultrathin LCMO layers and enhance the TC by ∼90 K. Moreover, we observe a clear reorientation of the magnetic easy axis from orthorhombic [010] to [100] as x decreased to 0, which may originate from the enhanced SOC. Our work provides an insight for utilizing the 4d/5d transition-metal-oxides to tune the functionality of magnetic heterostructures. [ABSTRACT FROM AUTHOR]

A comprehensive understanding of the disorder-induced transport characteristics in resistive random-access memory (RRAM) is critical for its thermal stability analysis and analog switching for the coming neuromorphic computing application. Superior to the previous transport mechanisms which are only valid within their respective ranges of temperatures, we propose a unified physics-based model that can accurately predict the transport dependence on all temperature ranges up to 300 K. By utilizing percolation theory and the Fermi Golden Rule, the probability distributions for both the tunnel junction energy barrier and gap distance based statistical resistance model are described. It is found that different programming cycles and resistance states contribute to transition behavior between various low-temperature transport mechanisms. Moreover, the model can also investigate the dependence of electrical characteristics on defect generation like radiation damage. Therefore, it quantitatively relates the thermal stability and percolation effects to the structural disorders in RRAM. The good agreement between the simulation and experimental results indicates that our physics-based model can provide an accurate prediction of temperature and disorder dependent effects in RRAMs. [ABSTRACT FROM AUTHOR]