Search

Lightning is a major cause of tripping faults in overhead transmission lines. Multi-chamber lightning arresters are widely used to protect high-voltage lines from lightning because of their reliable arc-quenching performance. This paper analyzes the development and quenching process of an arc after a lightning breakdown arrester and studies the quenching mechanism of a multi-chamber arc structure based on its structural characteristics. We built an impulse-current test platform and carried out an impulse-current test for the multi-chamber arrester. The arc motion was captured by a high-speed camera, and the height, speed, and temperature of the arc ejection were obtained by signal processing. The multi-chamber arrester structure is optimized by using the maximum arc ejection height and the maximum ejection speed as metrics to find the optimal combination of the quenching-hole diameter and depth and the gap distance of the multi-chamber structure. [ABSTRACT FROM AUTHOR]

Proton irradiation-induced effects on AlGaN/GaN high electron mobility transistors (HEMTs) were studied by emulating a certain space radiation environment (upstream of the earth's bow shock) using a relatively low energy (100 keV) proton beam with fluences of 1 × 1010, 1 × 1012, and 1 × 1014 protons/cm2. In order to isolate radiation-induced effects produced by the modification of the epi-layer from the effects produced by the change in the device structure (such as contacts), the epi-layers were irradiated prior to device fabrication, followed by material/device characterization. Proton irradiation-induced sub-gap traps were detected by spectroscopic photo current-voltage measurement. Raman study revealed that the proton irradiation had induced strain relaxation on the AlGaN/GaN HEMTs epi-layer. No substantial change in the crystal quality of the epi-layer was indicated by Raman and PL studies. With increasing proton fluences, increasing charge carrier density was observed, which was estimated via Raman spectroscopy and the charge-control model analysis. The magnitude and direction of the transistor threshold voltage shift were also dependent on proton fluence. Overall, degradation of transistor output characteristics of the fabricated HEMTs was observed with increasing proton fluence. However, based on the observed performance and the level of influence on material/device characteristics by 100 keV protons, it can be suggested that the AlGaN/GaN HEMTs have high endurance for exposure to relatively high fluences of the low-energy proton beam. [ABSTRACT FROM AUTHOR]