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The first-principles electronic structure calculation was applied to investigate the electronic properties of the LaAlO 3 /SrTiO 3 (001) heterostructure system (HSs) under strain. The results show that the distorted structure at the interface determines the occupied orbitals of 2DEG, further resulting in different sensitivities of interfacial charge carrier density, electron effective mass, electron mobility, and electrical conductivity on strain. The interfacial metallic states of tensile-strained and biaxial-compressive-strained LaAlO 3 /SrTiO 3 (001) HSs mainly occupy Ti 3d x y orbitals, which is the same for unstrained HSs. Then, the electron effective mass slightly decreases with tensile strain, which leads to a higher electrical conductivity. Different from biaxial-compressive-strained LaAlO 3 /SrTiO 3 (001) HSs with Ti 3d x y occupied orbitals, the Ti 3d y z orbitals are occupied for uniaxial-compressive-strained HSs, thus leading to a remarkably increased electron effective mass and sharply decreased electrical conductivity. These results give us a guidance to effectively modify the interfacial electronic characteristics of LaAlO 3 /SrTiO 3 (001) HSs by strain. [ABSTRACT FROM AUTHOR]

A high-quality interface of III–V/high-k dielectrics is critical to obtain high-performance devices. Indium out-diffusion in an InP-based stack is correlated with the density of interface states. Diffused In species are in the form of oxides, which invite the question about the diffusion of species through the high-k dielectric layer. For an InP/Al2O3 stack, O18 isotope tracing is carried out to investigate if the interface oxygen and indium atoms diffuse together or not. This work sheds light on the fundamental mechanism for III–V semiconductors' interface elemental diffusion as well as the interface passivation strategy. [ABSTRACT FROM AUTHOR]