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Wide bandgap β-Ga2O3 is an ideal candidate material with broad application prospects for power electronic components in the future. Aiming at the application requirements of β-Ga2O3 in space photoelectric devices, this work studies the influence of 40 MeV Si ion irradiation on the microstructure and optical properties of β-Ga2O3 epi-wafers. Raman spectroscopy analysis confirms that Si ion irradiation destroys the symmetric stretching mode of tetrahedral–octahedral chains in β-Ga2O3 epi-wafers, and the obtained experimental evidence of irradiation leads to the enhanced defect density of VO and VGa–VO from x-ray photoelectron spectroscopy. Combined with first-principles calculations, we conclude that most configurations of VO and VGa–VO are likely non-radiative, leading to quenching of experimental photoluminescence intensity. Unraveling optical degradation mechanism and predicting the optical application of β-Ga2O3 devices in the space environment by combining ground irradiation experiments with first-principles calculations still be one of the focuses of research in the future. [ABSTRACT FROM AUTHOR]

Recent progress on qubit manipulation allows application of periodic driving signals on qubits. In this study, a harmonic driving field is added to a Rabi dimer to engineer photon and qubit dynamics in a circuit quantum electrodynamics device. To model environmental effects, qubits in the Rabi dimer are coupled to a phonon bath with a sub-Ohmic spectral density. A nonperturbative treatment, the Dirac-Frenkel time-dependent variational principle together with the multiple Davydov D2 ansatz, is employed to explore the dynamical behavior of the tunable Rabi dimer. In the absence of the phonon bath, the amplitude damping of the photon number oscillation is greatly suppressed by the driving field, and photons can be created, thanks to the resonance between the periodic driving field and the photon frequency. In the presence of the phonon bath, one can still change the photon numbers in two resonators and indirectly alter the photon imbalance in the Rabi dimer by directly varying the driving signal in one qubit. It is shown that qubit states can be manipulated directly by the harmonic driving. The environment is found to strengthen the interqubit asymmetry induced by the external driving, opening up a new venue to engineer the qubit states. [ABSTRACT FROM AUTHOR]

Electron traps in AlGaN/GaN high electron mobility transistors were studied by combining theoretical and experimental methods. Energy levels about EC-0.9 eV due to irradiation are identified by deep-level transient spectroscopy (DLTS). Two electron traps, H1 (EC-0.63 eV) and H2 (EC-0.9 eV), were observed in the DLTS spectra. H1 was produced in device or material manufacturing, and H2 was caused by displacement damage. First, we reported that the signal peak of H2 can contribute from three defects labeled H2-1, H2-2, and H2-3 with energies EC-0.77 eV, EC-0.9 eV, and EC-0.98 eV, respectively. According to defect migration temperature and first principles calculation results, it is found that different configurations of di-nitrogen vacancy structures are the source of EC-0.77 eV and EC-0.9 eV signals. The defect of EC-0.98 eV is more stable at high temperatures, which may be related to gallium vacancy. [ABSTRACT FROM AUTHOR]

Orbital-free density functional theory (OFDFT) replaces the wavefunction in the kinetic energy by an explicit energy functional and thereby speeds up significantly the calculation of ground state properties of the solid state systems. So far, the application of OFDFT has been centered on closed systems and less attention is paid on the transport properties in open systems. In this paper, we use OFDFT and combine it with non-equilibrium Green's function to simulate equilibrium electronic transport properties in silicon nanostructures from first principles. In particular, we study ac transport properties of a silicon atomic junction consisting of a silicon atomic chain and two monoatomic leads. We have calculated the dynamic conductance of this atomic junction as a function of ac frequency with one to four silicon atoms in the central scattering region. Although the system is transmissive with dc conductance around 4 to 5 e2/h, capacitive-like behavior was found in the finite frequency regime. Our analysis shows that, up to 0.1 THz, this behavior can be characterized by a classic RC circuit consisting of two resistors and a capacitor. One resistor gives rise to dc resistance and the other one accounts for the charge relaxation resistance with magnitude around 0.2 h/e2 when the silicon chain contains two atoms. It was found that the capacitance is around 5 aF for the same system. [ABSTRACT FROM AUTHOR]

We report properties of parametric electron pumping in the presence of a superconducting lead. Due to a constructive interference between the direct reflection and the multiple Andreev reflection, the pumped current is greatly enhanced. For both quantum point contacts and double barrier structures at resonance, we obtain exact solutions in the weak pumping regime showing that I[sup NS][sub p] = 4I[sup N][sub p], which should be compared with the result of conductance G[sub NS] = 2 G[sub N]. Numerical results are also provided for the strong pumping regime showing interesting Andreev assisted pumping behavior. [ABSTRACT FROM AUTHOR]

Based on nonequilibrium Green's function approach and density functional theory, we report first principles investigation on ac transport of four carbon atomic chain connected by two semi-infinite aluminum leads, Al-C(4)-Al. For small alternating external bias voltage, we expanded nonequilibrium Green's function to the first order in the external voltage and calculated the dynamical conductance. The suppression of the dynamic conductance was obtained near the resonant level, while far away from the resonance, the large enhancement of the dynamic conductance was observed. These behaviors can be understood well under the wide-band limit. By changing the coupling distance between the carbon atom and the aluminum leads, the system could change its transport response between capacitivelike and inductivelike.

Based on nonequilibrium Green's function approach and density functional theory, we report first principles investigation on ac transport of four carbon atom chain connected by two semi-infinite aluminum leads Al-C(4)-Al. For small alternating external bias voltage, we expanded nonequilibrium Green's function to the first order in the external voltage and calculated the dynamical conductance. The suppression of the dynamic conductance was obtained near the resonant level while far away from the resonance the giant enhancement of the dynamic conductance was also observed. These behaviors can be well understood under the wide-band limit. By changing the coupling distance between the carbon atom and aluminum leads, the system could change its transport response between capacitivelike and inductivelike.

The thermoelectric transport properties in atomic scale conductors consisting of a Si atom connected by two electrodes are investigated. It is found that both the electrical current and the heat current have two contributions, one from the voltage and the other from the temperature gradient. The quantities such as the Seebeck thermopower and the thermal conductance that characterize the thermoelectric transport properties of the tunnel atomic junction are studied quantitatively with a first-principles technique within the framework of Landauer-Buttiker formalism in the linear response regime. A finite thermopower only exists in a very narrow range where the energy derivative of the transmission function is nonzero. The thermopower anomaly is observed in the tunneling regime in this device but this does not violate the thermodynamic law with respect to the heat current., ((c) 2004 American Institute of Physics.)