1. Influence of In incorporation on the electronic structure of ZnO nanowires.
- Author
-
Seung Yong Bae, Hyun Chul Choi, Chan Woong Na, and Jeunghee Park
- Subjects
NANOWIRES ,GOING public (Securities) ,CATHODE rays ,PARTICLES (Nuclear physics) ,ELECTRIC wire ,NANOSTRUCTURED materials - Abstract
High-density Zn
0.85 In0.15 O and Zn0.75 In0.25 O nanowires were synthesized by thermal evaporation method. They consist of single-crystalline wurtzite ZnO structure with uniform [010] growth direction. X-ray diffraction (XRD) reveals the structural defects caused by the In incorporation. X-ray photoelectron spectrum (XPS) analysis suggests that In withdraw the electrons from Zn and increase the dangling-bond O 2p states. The lower energy shift and green-band enhancement of photoluminescence are well correlated with the results of XRD and XPS. [ABSTRACT FROM AUTHOR]- Published
- 2005
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