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Target poisoning is prevalent in reactive magnetron sputtering and causes deleterious effects, especially in deposition using metal targets. Both the deposition rate and the stoichiometry ratio of the coatings will be compromised because of the quicker coverage of the poisoning materials on the target relative to removal by sputtering. Continuous high-power magnetron sputtering (C-HPMS) possesses merits such as more rapid sputtering than high-power impulse magnetron sputtering and better target poisoning resistance. In this work, the discharge and plasma characteristics of C-HPMS for an Al metal target in reactive O2/Ar atmospheres are investigated by modeling and alumina deposition. At a constant oxygen partial pressure, larger discharge power increases target etching significantly compared to surface combination with O2, leading to reduced surface poisoning. Besides, a higher temperature is produced near the target to produce more intense rarefaction effects and decrease the risk of target poisoning. In Al discharge, the stable deposition window in the O2/Ar ratio under 120 W/cm2 is 5 times of that under 20 W/cm2. Moreover, a large deposition rate of 112 nm/min is achieved at the poisoning-saturated point and a target/substrate distance can be increased to larger than 40 cm, thus providing more flexibility in the design of deposition parameters and hardware requirement. Our results show that high discharge intensity improves plasma density and ionization rates of reactive particles boding well for the deposition of under-stoichiometric and higher-quality amorphous Al2O3 films. The reactive C-HPMS technique has large potential in the commercial production of functional coatings and thin films. [ABSTRACT FROM AUTHOR]

Systematic analysis of discharge processes is needed for a good understanding of the physical mechanism that enables optimal coating deposition, especially pulsed discharges sustained by high voltages and large currents. Owing to the temporal and complex characteristics of the discharge process and relatively simplistic analytical methods, the discharge process and particle evolution in high-power impulse magnetron sputtering (HiPIMS) are still not well understood. In this work, a cylindrical cathode is introduced to restrict the discharge and delay plasma loss, and a global model is established to simulate the discharge on a Cr target in N2/Ar. Particles with different reaction energies appearing successively produce an asynchronous discharge phenomenon, and a series of inflection points corresponding to different physical processes including excitation, sputtering, ionization, and diffusion are observed from the particle density evolution curves. High-precision and time-resolved spectrometry (400 ns) is utilized to monitor the evolution of particles with time, and inflection points predicted by the model are observed experimentally to verify the particle behavior in the HiPIMS discharge. [ABSTRACT FROM AUTHOR]

High-power impulse magnetron sputtering boasts high ionization, large coating density, and good film adhesion but suffers from drawbacks such as low deposition rates, unstable discharge, and different ionization rates for different materials. Herein, a cylindrical cathode in which the special cathode shape introduces the hollow cathode effect to enhance the discharge is described. To study the discharge performance of the cylindrical cathode, a hollow cathode effect modified time-dependent global model is established to fit the discharge current pulses. The simulation results indicate that the cylindrical cathode has relatively large Hall parameters of 24 (700 V) to 26 (1000 V). Compared to the planar cathode, the cylindrical cathode has a larger plasma density as a result of the hollow cathode effect. In addition, the ionization rate and ion return probability increase by about 3.0% and 4.3%, respectively. Particle transport derived from the plasma diffusion model shows that the magnetic field enables further diffusion of ions than atoms, resulting in nearly pure ion deposition on the substrate. The deposition rate and ion current measured experimentally support the simulation model and results, and this model provides a universal platform to simulate plasma systems with similar structures. [ABSTRACT FROM AUTHOR]

A novel plasma immersion ion implantation technique based on high power pulsed magnetron sputtering (HPPMS) discharge that can produce a high density metal plasma is described. The metal plasma is clean and does not suffer from contamination from macroparticles, and the process can be readily scaled up for industrial production. The hardware, working principle, and operation modes are described. A matching circuit is developed to modulate the high-voltage and HPPMS pulses to enable operation under different modes such as simultaneous implantation and deposition, pure implantation, and selective implantation. To demonstrate the efficacy of the system and technique, CrN films with a smooth and dense surface without macroparticles were produced. An excellent adhesion with a critical load of 59.9 N is achieved for the pure implantation mode. [ABSTRACT FROM AUTHOR]