1. An analytical drain current model for symmetric double-gate MOSFETs.
- Author
-
Yu, Fei, Huang, Gongyi, Lin, Wei, and Xu, Chuanzhong
- Subjects
METAL oxide semiconductor field-effect transistors ,SURFACE potential ,GATE array circuits - Abstract
An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson’s equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson’s equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF