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Your search keyword '"Yamada, Takatoshi"' showing total 26 results

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26 results on '"Yamada, Takatoshi"'

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1. Potassium-doped nano graphene as an intermediate layer for graphene electronics.

2. Band alignment determination of bulk h-BN and graphene/h-BN laminates using photoelectron emission microscopy.

3. Charge stabilization of shallow nitrogen-vacancy centers using graphene/diamond junctions.

4. Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping.

5. Relationship between mobility and strain in CVD graphene on h-BN.

6. Observation of two-level defect system in amorphous Se superlattices.

7. Resonant field emission from two-dimensional density of state on hydrogen-terminated intrinsic diamond.

8. Quantized electronic properties of diamond.

9. Electron emission from N-doped homoepitaxially grown diamond.

10. Field emission spectroscopy measurements of graphene/n-type diamond heterojunction.

11. Potassium-doped n-type bilayer graphene.

12. Field electron emission properties of n-type (111)-oriented single crystal cubic boron nitride.

13. Field emission characteristics of surface-reconstructed heavily phosphorus-doped homoepitaxial diamond.

14. Field emission from H- and O-terminated heavily P-doped homoepitaxial diamond.

15. Amorphous selenium based photodetector driven by field emission current from N-doped diamond cold cathode.

18. A transparent ultraviolet triggered amorphous selenium p-n junction.

19. Field emission from reconstructed heavily phosphorus-doped homoepitaxial diamond (111).

20. Electron emission mechanism of diamond characterized using combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy system.

21. Field emission mechanism of oxidized highly phosphorus-doped homoepitaxial diamond (111).

22. Large remanent polarization and coercive force by 100% 180° domain switching in epitaxial Pb(Zr[sub 0.5]Ti[sub 0.5])O[sub 3] capacitor.

23. Electrical characterization of graphene films synthesized by low-temperature microwave plasma chemical vapor deposition.

24. Conditions for a carrier multiplication in amorphous-selenium based photodetector.

25. Metal-insulator-vacuum type electron emission from N-containing chemical vapor deposited diamond.

26. Potential profile between boron-doped diamond electron emitter and anode electrode.

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