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We studied the oxide charges and traps within nitrided Hf-silicate (HfSiON)/SiO2 gate stacks processed with high-temperature annealing with a spectroscopic technique by using high spatial resolution scanning capacitance microscopy. Spectroscopy was performed by detecting the static capacitance (dC/dZ) between a conductive probe and the sample while sweeping the sample bias. The dC/dZ image and spatially resolved dC/dZ-V spectrum revealed the existence of positive fixed charges within HfSiON and interface trap charges between the SiO2 underlayer and Si substrate. We also observed a transient electron trap process from the conductive probe to the HfSiON film as abrupt discontinuities in the dC/dZ-V spectrum and with bias-induced topography change of the HfSiON surface. These oxide charges and trap sites distribute inhomogeneously within HfSiON/SiO2 gate stacks, and the origin of these charged defects is ascribable to phase separation induced by high-temperature postdeposition annealing. [ABSTRACT FROM AUTHOR]

Presents a study that obtained the effective surface recombination velocity at plasma enhanced chemical vapor deposited silicon dioxide/silicon interface as a function of surface band bending under illumination. Combination of the photoconductive voltage decay measurements with indium tin oxide gate bias voltage; Achievement of the capture cross sections for electrons and holes; Basis of the theoretical calculations of surface recombination velocity.

Reports on the preparation of SiO[sub2]/silicon interface by a direct plasma-enhanced chemical-vapor deposition (PECVD) followed by rapid thermal annealing (RTA). Material used in the study; Comparison of RTA and furnace annealing PECVD oxides; Effect of oxide charge on interface recombination velocity; Stability of effective lifetime in PECVD oxide.

Scanning capacitance microscopy using a self-sensing probe has been applied to the quantification of local dielectric properties in Hf-based high-k films grown by an atomic layer deposition method. Local capacitance spectroscopy revealed distinctive contrasts in dC/dV and dC/dZ images originating from the spatial distribution of fixed charges in the films. We also found that the HfSiON film shows better performance than HfSiO and HfO2, in terms of flat-band voltage (VFB) shift and spatial fluctuation. In every sample, the spatial fluctuations of gate capacitance (COX) are less than 3%. Considering VFB shift and COX fluctuations, HfSiON was found to be a promising candidate for gate dielectric applications. [ABSTRACT FROM AUTHOR]

Examines the development of silica (SiO[sub 2])/silicon (Si) interface state density for low temperature deposited oxides on Si substrates. Difficulty of growing oxides in plasma-enhanced chemical vapor deposition (PEVCD); Post-deposition treatment of PEVCD oxide; Effects of aluminum layer on Si/SiO[sub 2] interface defect passivation.

The atmospheric pressure plasma chemical vapor deposition (CVD) system has been developed to fabricate functional thin films at very high deposition rate. The atmospheric pressure plasma, in which high-density radicals are created, has been effectively used to deposit thin films. Combination of the newly designed rotary electrode and the 150 MHz very high frequency power supply makes it possible not only to generate the high-density atmospheric pressure plasma but also to avoid ion bombardment against the film. By virtue of these noble characteristics of the system, high quality films can be fabricated at an unprecedented high deposition rate. In order to demonstrate the effectiveness of the atmospheric pressure plasma CVD system, hydrogenated amorphous silicon (a-Si:H) films were prepared in gas mixtures containing He, H[sub 2], and SiH[sub 4]. The results showed that homogeneous a-Si:H films grew when substrates were heated at 200 °C. Extremely high deposition rate, which was more than 100 times faster than that of the conventional low-pressure plasma CVD technique, was realized. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]