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Your search keyword '"Yen-Ming Chen"' showing total 3 results
Start Over Author "Yen-Ming Chen" Publisher american institute of physics
3 results on '"Yen-Ming Chen"'

1. Transient Simulation of Molten Salt Central Receiver.

Author

Doupis, Dimitri, Chuan Wang, Carcorze-Soto, Jorge, Yen-Ming Chen, Maggi, Andrea, Losito, Matteo, and Clark, Michael

Subjects
FUSED salts, SOLAR receivers, SOLAR concentrators, SOLAR energy, SODIUM nitrites
Abstract

Alstom is developing concentrated solar power (CSP) utilizing 60/40wt% NaNO3-KNO3 molten salt as the working fluid in a tower receiver for the global renewable energy market. In the CSP power generation cycle, receivers undergo a daily cyclic operation due to the transient nature of solar energy. Development of robust and efficient start-up and shut-down procedures is critical to avoiding component failures due to mechanical fatigue resulting from thermal transients, thus maintaining the performance and availability of the CSP plant. The Molten Salt Central Receiver (MSCR) is subject to thermal transients during normal daily operation, a cycle that includes warmup, filling, operation, draining, and shutdown. This paper describes a study to leverage dynamic simulation and finite element analysis (FEA) in development of start-up, shutdown, and transient operation concepts for the MSCR. The results of the FEA also verify the robustness of the MSCR design to the thermal transients anticipated during the operation of the plant. [ABSTRACT FROM AUTHOR]

Published
2016
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2. Thermal stability study on nanoscale polysilicide resistors.

Author

Yen-Ming Chen, Ying-Lang Wang, Gwo-Jen Hwang, Yungder Juang, and Wen-His Lee

Subjects
NANOSCIENCE, SILICIDES, SILICON compounds, POLYCRYSTALLINE semiconductors, SEMICONDUCTORS
Abstract

In this study, the thermal stability behavior of nanoscale polysilicide resistors with different dopant types was investigated in 90 nm complementary metal oxide semiconductor process. It was found that thermal stability performance of polysilicide resistors was impacted not only by the silicide thickness but also by the relation between silicide grain size distribution and the actual poly linewidth. A quantitative equation for thermal stability was derived by the combination of thickness and linewidth. This equation showed good correlation with the activation energy of the degradation for the narrow poly width resistors. [ABSTRACT FROM AUTHOR]

Published
2006
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3. CoSix thermal stability on narrow-width polysilicon resistors.

Author

Yen-Ming Chen, Tu, George C., Ying-Lang Wang, Gwo-Jen Hwang, and Cheng-Yao Lo

Subjects
SILICON, SILICIDES, SEMICONDUCTORS, ELECTRIC resistors, RESEARCH
Abstract

In this study, the thermal stability of polysilicon lines with various widths and different dopant types in 90-nm processes is investigated. The thermal behavior of silicides formed on N+ polyresistors and P+ polyresistors is very different. The worst thermal stability is found on the narrower N+ polyresistors, while an abnormal thermal behavior is observed on P+ polyresistors. This anomalous thermal-stability change with different drawn linewidths of P+ polyresistors is related to the grain-size distribution and the actual polyresistor linewidth. Also, it is interesting to find that the voids formed in P+ polyresistors lead to a stepped increase in sheet resistance. [ABSTRACT FROM AUTHOR]

Published
2006
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