Search

In this paper, we have presented an atomistic quantum simulation study to investigate the device performances of GaSb/InAs heterojunction tunnel field-effect transistors (TFETs) with nanometer body thicknesses. It is revealed that the thin junction induced quantum confinement effect results in a heterojunction type transition from type-III to type-II as the junction thickness reduces, which can be used as an effective modulation of the TFET device performance. It is found that as the channel thickness decreases, both the ON current and OFF current of the device decrease significantly due to the quantum confinement induced effective band gap enlargement. In addition, the OFF current of the heterojunction GaSb/InAs TFET is always larger than that of the homojunction InAs TFET, which is possibly caused by the GaSb/InAs interfacial state assisted tunneling. It is also revealed that the subthreshold swing of the heterojunction TFET does not change much as the channel thickness is reduced. [ABSTRACT FROM AUTHOR]

In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress. [ABSTRACT FROM AUTHOR]