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Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than the current state of the art resonator (Q-factor of ∼10 million). Yet the material limitations of ion-sliced thin film lithium niobate have not been explored; therefore, it is unclear how high the quality factor can be achieved in this platform. Here, using our newly developed characterization method, we find out that the material limited quality factor of thin film lithium niobate photonic platform can be improved using post-fabrication annealing and can be as high as Q ≈ 1.6 × 108 at telecommunication wavelengths, corresponding to a propagation loss of 0.2 dB/m. [ABSTRACT FROM AUTHOR]

Semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts. [ABSTRACT FROM AUTHOR]