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As the demand for high-capacity battery materials continues to grow, the exploration of the interaction mechanisms between Li/Na/K atoms and electrode materials has gained tremendous attention. In this study, we introduce a descriptor (ɛɑ) aimed at efficiently identifying high-performance electrode materials, specifically from two-dimensional transition metal chalcogenides and C and N compounds (MXenes). Our density functional theory calculations disclose a robust linear relationship between this descriptor and the adsorption energy (Ead), represented as Ead = ɛɑ + b. The fitting parameters, ɛɑ and b, are individually linked to the inherent properties of the substrate and adsorbate. Explicitly, the descriptor ɛɑ represents the capacity of the electrode material to accommodate an extra electron, while the intercept b is determined by the ionization energy (EIP) of alkali atoms and the coupling energy (Ecp) between the cation to the negatively charged substrate. This finding serves as a practical guide for designing high-capacity battery materials and paves the way for future advancements in this field. [ABSTRACT FROM AUTHOR]

Electric detection of spin currents is critical for integrating spintronic devices into charge-based semiconductor chips and systems. The magnetogyrotropic photogalvanic effect (MPGE) converts spin current into charge current through spin–orbit coupling in the presence of an in-plane magnetic field. A giant MPGE photocurrent implies either a large spin current or high spin-to-charge conversion efficiency, whichever is important for future spintronic devices. In this Letter, we report on the MPGE photocurrents excited by linearly polarized near-infrared radiation in a GaAs/Al0.3Ga0.7As heterostructure, which are increased by up to five times by an additional visible light with adjustable power. We present a theoretical model and suggest that the optical manipulation of the linear MPGE photocurrent is primarily attributed to the spin current tuned by the momentum relaxation time and spin splittings. [ABSTRACT FROM AUTHOR]