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Studies the gettering effects of ion-beam defect engineering in BF[sub2]-implanted silicon. Details on the experiment; Results of the study; Conclusion.

Deals with a study which compared experimental longitudinal damage straggling and lateral damage spread induced by 1.0 high energy Cu[sup+] in silicon(100) with the transport of ions in matter prediction. Experimental details; Results and discussion.

Presents a study which examined the lateral spread effects in the implantation of Ar[sup+], Xe[sup+], and Hg[sup+] ions in Si³N[sup4] films. Experimental details; Results and discussion; Conclusion.

Proposes a concept called ion beam defect engineering. Background to the study; Experimental procedures; Experimental results.

Presents a study which examined the depth distribution of mercury ions implanted in potassium titanyl phosphate. Experimental details; Results and discussion; Conclusion.

Presents a study on xenon ions at energies from 50 to 500 keV that have been implanted into the polymer ladderlike polyphenylsilsesquioxane. Experimental procedures; Results and discussion; Agreement found between the experimental data and calculated values for the mean projected range.

Presents a study which iInvestigated lateral straggling of xenon ions in potassium titanyl phosphate. Details on the experiment; Results of the study; Conclusion.

Presents a study on the distributions of implanted iron ions into both amorphized quartz crystal and silicon at energies by using the Rutherford backscatteting technique. Experimental procedures; Results and discussion.

We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si1-xGex substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be {10-10}-type plane. After germanosilicidation the strain in the rest Si1-xGex layer is conserved, which provides a great advantage for device application. [ABSTRACT FROM AUTHOR]

We report the study of high-dielectric-constant (high-κ) dielectric LaLuO3 (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin (∼2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 ± 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal a high effective dielectric constant of ∼28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode. [ABSTRACT FROM AUTHOR]