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Highly (001)-textured antimony telluride films were fabricated using molecular beam epitaxy (MBE) on Si (111) substrate at 280 °C. X-ray diffraction analysis implying the samples have good crystalline quality, simultaneously, the grain sizes coarsening with increasing thickness. The results of Hall coefficient measurement demonstrated that the carrier concentration and mobility are strongly affected by grain boundaries and microcrystalline internal defects. It was found that the grain boundaries play a primary factor influencing the carrier concentration in thinner film. At room temperature, the results in a maximum mobility value of 305 cm²=Vs for 121-nm-thick film, and the electrical conductivity increased from 425.7 S/cm to 1036 S/cm as the thickness varied from 28 nm to 121 nm. In the range of room temperature to 150 °C, the resistivity almost linearly increased with increasing temperature. This may be explained by low concentration of impurities or defects and shallow impurity band. For difference thickness films, temperature coefficients of resistivity are substantially equal, and the values are about 3~4 µΩ ⋅ cm=K. [ABSTRACT FROM AUTHOR]

In this paper, we illuminated the observation of asymmetric ferroelectric switching phenomena in fatigued P(VDF-TrFE) copolymer films. Two types of asymmetric switching were observed: one was the occurrence of switching dual peaks obtained from films with asymmetric electrode structure and the other was the jump of remanent polarization during fatigue process, as was obtained mostly from films with asymmetric electrodes and occasionally from films with symmetric electrodes. No evidence indicated the dependence between the switching dual peaks and the jump of remanent polarization. The possible mechanism of such asymmetric phenomena was also discussed. [ABSTRACT FROM AUTHOR]