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The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed. The CMC is induced in polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor. At the same time, an insulator-metal transition and a concomitant CMR are observed near the Curie temperature. In contrast, after the same annealing treatment, CdCr2S4 displays a typical semiconductor behavior and does not show magnetic field dependent dielectric and electric transport properties. The simultaneous occurrence or absence of CMC and CMR effects implies that the CMC in the annealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination of CMR and Maxwell-Wagner effect. [ABSTRACT FROM AUTHOR]

A ferromagnetic shape memory alloy was utilized to construct a Ni43Mn41Co5Sn11/Pb(Zr,Ti)O3 laminate. Large direct and converse magnetoelectric (ME) effects were observed at resonance frequencies around the martensitic transition temperature of Ni43Mn41Co5Sn11 alloy, and the temperature affects the ME properties remarkably. The ME coefficients respond almost linearly to the applied ac electric or magnetic field. The mechanism of both direct and converse ME effects in the laminate is discussed. [ABSTRACT FROM AUTHOR]

The article states that due to the potential integration of microelectronics and optoelectronics, the growth of Gallium nitride (GaN) on silicon (Si) substrates attracts a lot of attention. A major challenge in the growth of GaN on Si is the large mismatch of the in-plane thermal expansion coefficient, which leads to cracking in the GaN layer when cooling the heterostructure from the growth temperature to room temperature. The authors in this article report on the growth and properties of epitaxial GaN layers on Si compound using metalorganic chemical vapor deposition.