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With pulsed laser deposition, we have grown c axis oriented thin films of the nominal composition LaMnO3 (LMO) on LSAT(001) substrates. We find that, depending on the oxygen background pressure during growth, the LMO films contain sizeable amounts of La and/or Mn vacancies that strongly influence their electronic and magnetic properties. Specifically, we show that the Mn/La ratio can be systematically varied from 0.92 at 0.11 mbar to 1.09 at 0.30 mbar of oxygen. The cationic vacancies have markedly different effects that become most pronounced once the samples are fully oxygenated and thus strongly hole doped. All as-grown and thus slightly oxygen-deficient LMO films are ferromagnetic insulators with saturation moments in excess of 2.5 μB per Mn ion, their transport and optical properties can be understood in terms of trapped ferromagnetic polarons. Upon oxygen annealing, the most La-deficient films develop a metallic response with an even larger ferromagnetic saturation moment of 3.8 μB per Mn ion. In contrast, in the oxygenated Mn-deficient films, the ferromagnetic order is strongly suppressed to less than 0.5 μB per Mn ion, and the transport remains insulatorlike. We compare our results with the ones that were previously obtained on bulk samples and present an interpretation in terms of the much stronger disruption of the electronic and magnetic structure by the Mn vacancies as compared to the La vacancies. We also discuss the implications for the growth of LMO thin films with well-defined physical properties that are a prerequisite for the study of interface effects in multilayers. [ABSTRACT FROM AUTHOR]

Rubrene single crystals have been irradiated with 1-MeV protons and helium ions at various fluence levels (0.1 x 1012--5 x 1012 particles/cm2), and the resulting increase of the density of bulk trap states (DOS) has been studied by temperature-dependent space-charge-limited current measurements. Irradiation creates a peak in the trap DOS (about 1016 traps/cm3 for a radiation dose of ≈35 J/g), centered at ≈0.35 eV above the valence band edge. With incrementally increasing radiation dose, the induced trap density rises sublinearly and saturates at high dose. Three to five times more traps are created if the crystal surface is not covered during irradiation. We attribute this trap creation primarily to C-H bond breaking accompanied by hydrogen loss. [ABSTRACT FROM AUTHOR]

The application of focused ion beam (FIB) nanotomography and Rutherford backscattering spectroscopy (RBS) to dealloyed platinum-aluminum thin films allows for an in-depth analysis of the dominating physical mechanisms of nanoporosity formation during the dealloying process. The porosity formation due to the dissolution of the less noble aluminum in the alloy is treated as result of a reaction-diffusion system. The RBS and FIB analysis yields that the porosity evolution has to be regarded as superposition of two independent processes, a linearly propagating diffusion front with a uniform speed and a slower dissolution process in regions which have already been passed by the diffusion front. The experimentally observed front evolution is captured by the Fisher-Kolmogorov-Petrovskii-Piskounov (FKPP). The slower dissolution is represented by a zero-order rate law which causes a gradual porosity in the thin film. [ABSTRACT FROM AUTHOR]

Highly porous Pt/AI thin film electrodes on yttria-stabilized zirconia electrolytes were prepared by dealloying of co-sputtered Pt/Al films. The oxygen reduction capability of the resulting electrodes was analyzed in a solid oxide fuel cell setup at elevated temperatures. During initial heating to 523 K, exceptionally high performances compared to conventional Pt thin film electrodes were measured. This results from the high internal surface area and large three phase boundary length obtained by the dealloying process. Exposure to elevated temperatures of 673 or 873 K gave rise to degradation of the electrode performance, which was primarily attributed to the oxidation of remaining AI in the thin films. [ABSTRACT FROM AUTHOR]

At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an s-wave SC in a TI can develop an order parameter with a p-wave component. Here we present experimental evidence for an unexpected proximity-induced novel superconducting state in a thin layer of the prototypical TI, Bi2Se3 proximity coupled to Nb. From depth-resolved magnetic field measurements below the superconducting transition temperature of Nb, we observe a local enhancement of the magnetic field in Bi2Se3 that exceeds the externally applied field, thus supporting the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state. Our experimental results are complemented by theoretical calculations supporting the appearance of such a component at the interface which extends into the TI. This state is topologically distinct from the conventional Bardeen-Cooper-Schrieffer state it originates from. To the best of our knowledge, these findings present a first observation of bulk odd-frequency superconductivity in a TI. We thus reaffirm the potential of the TI-SC interface as a versatile platform to produce novel superconducting states. [ABSTRACT FROM AUTHOR]